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SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

  • US 20190318956A1
  • Filed: 02/14/2019
  • Published: 10/17/2019
  • Est. Priority Date: 04/11/2018
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a substrate;

    a first impurity region of a first conductivity type on the substrate;

    a second impurity region of a second conductivity type on the substrate to be adjacent to the first impurity region;

    a first semiconductor layer of the second conductivity type on the first impurity region;

    a second semiconductor layer of the first conductivity type on the second impurity region;

    a first buried insulation layer on the first semiconductor layer;

    a second buried insulation layer on the second semiconductor layer;

    a third semiconductor layer on the first buried insulation layer;

    a fourth semiconductor layer on the second buried insulation layer;

    a first transistor and a second transistor on the first semiconductor layer, respectively;

    a third transistor on the second semiconductor layer;

    a first element isolation layer which separates the second transistor and the third transistor; and

    a second element isolation layer which separates the first transistor and the second transistor and is shallower than the first element isolation layer.

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