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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

  • US 20190318997A1
  • Filed: 04/08/2019
  • Published: 10/17/2019
  • Est. Priority Date: 04/16/2018
  • Status: Abandoned Application
First Claim
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1. A semiconductor device, comprising:

  • a gate insulating film formed on a semiconductor substrate;

    a gate electrode formed on the gate insulating film;

    source/drain regions formed in the semiconductor substrate to be adjacent to the gate electrode;

    an element isolation region formed to surround the gate electrode and the source/drain regions;

    a guard ring formed in the semiconductor substrate to surround the element isolation region;

    a first interlayer insulating film formed to cover the gate electrode, the source/drain regions, the element isolation region, and the guard ring;

    a contact trench having a linear shape, and formed in the first interlayer insulating film to surround the element isolation region and to expose a surface of the guard ring;

    a first barrier metal film for shielding X-rays formed to cover inner side surfaces and a bottom surface of the contact trench; and

    a first metal film electrically connected to the guard ring, and having a first plug portion embedded in the contact trench through intermediation of the first barrier metal film, and a first wiring portion connected to the first plug portion and formed above the first interlayer insulating film.

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