SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
First Claim
Patent Images
1. A semiconductor device, comprising:
- a gate insulating film formed on a semiconductor substrate;
a gate electrode formed on the gate insulating film;
source/drain regions formed in the semiconductor substrate to be adjacent to the gate electrode;
an element isolation region formed to surround the gate electrode and the source/drain regions;
a guard ring formed in the semiconductor substrate to surround the element isolation region;
a first interlayer insulating film formed to cover the gate electrode, the source/drain regions, the element isolation region, and the guard ring;
a contact trench having a linear shape, and formed in the first interlayer insulating film to surround the element isolation region and to expose a surface of the guard ring;
a first barrier metal film for shielding X-rays formed to cover inner side surfaces and a bottom surface of the contact trench; and
a first metal film electrically connected to the guard ring, and having a first plug portion embedded in the contact trench through intermediation of the first barrier metal film, and a first wiring portion connected to the first plug portion and formed above the first interlayer insulating film.
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Abstract
Provided is a semiconductor device capable of shielding X-rays irradiated from a side surface side of a semiconductor substrate and a method of manufacturing the same. The semiconductor device includes: gate insulating film; a gate electrode; a source/drain region; an element isolation region; a guard ring surrounding the element isolation region; an interlayer insulating film; a contact trench in the interlayer insulating film; a barrier metal film for shielding X-rays covering inner side surfaces and a bottom surface of the contact trench; and a metal film connected to the guard ring.
3 Citations
12 Claims
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1. A semiconductor device, comprising:
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a gate insulating film formed on a semiconductor substrate; a gate electrode formed on the gate insulating film; source/drain regions formed in the semiconductor substrate to be adjacent to the gate electrode; an element isolation region formed to surround the gate electrode and the source/drain regions; a guard ring formed in the semiconductor substrate to surround the element isolation region; a first interlayer insulating film formed to cover the gate electrode, the source/drain regions, the element isolation region, and the guard ring; a contact trench having a linear shape, and formed in the first interlayer insulating film to surround the element isolation region and to expose a surface of the guard ring; a first barrier metal film for shielding X-rays formed to cover inner side surfaces and a bottom surface of the contact trench; and a first metal film electrically connected to the guard ring, and having a first plug portion embedded in the contact trench through intermediation of the first barrier metal film, and a first wiring portion connected to the first plug portion and formed above the first interlayer insulating film. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A method of manufacturing a semiconductor device, comprising:
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forming a gate insulating film on a semiconductor substrate; forming a gate electrode on the gate insulating film; forming source/drain regions in the semiconductor substrate to be adjacent to the gate electrode; forming an element isolation region to surround a region in which the gate electrode and the source/drain regions are formed; forming a guard ring in the semiconductor substrate to surround the element isolation region; forming a first interlayer insulating film to cover the gate electrode, the source/drain regions, the element isolation region, and the guard ring; forming a contact trench having a linear shape in the first interlayer insulating film to surround the element isolation region and to expose a surface of the guard ring; forming a first barrier metal film for shielding X-rays to cover inner side surfaces and a bottom surface of the contact trench; and forming a first metal film electrically connected to the guard ring, and having a first plug portion embedded in the contact trench through intermediation of the first barrier metal film, and a first wiring portion connected to the first plug portion and formed above the first interlayer insulating film. - View Dependent Claims (8, 9, 10, 11, 12)
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Specification