SEMICONDUCTOR DEVICE

• US 20190318999A1
• Filed: 02/26/2019
• Published: 10/17/2019
• Est. Priority Date: 04/11/2018
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: Toyota Jidosha Kabushiki Kaisha (Toyota Motor Corporation)
• Inventors: KAWASHIMA, Takanori
• Granted Patent: US 10,943,877 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/06181 On opposite sides of the body
• CPC Class Codes: H01L 2224/2612 Auxiliary members for layer connectors, e.g. spacers
• CPC Class Codes: H01L 2224/29101 the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/32245 the item being metallic
• CPC Class Codes: H01L 2224/33181 On opposite sides of the body
• CPC Class Codes: H01L 2224/40137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73221 Strap and wire connectors
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/83801 Soldering or alloying
• CPC Class Codes: H01L 23/051 another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/3675 characterised by the shape of the housing
• CPC Class Codes: H01L 23/49537 Plurality of lead frames mounted in one device
• CPC Class Codes: H01L 23/49541 Geometry of the lead-frame
• CPC Class Codes: H01L 23/49562 for devices being provided for in H01L29/00
• CPC Class Codes: H01L 23/49568 : specifically adapted to facilitate heat dissipation
• CPC Class Codes: H01L 23/49575 : Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 23/50 : for integrated circuit devices, e.g. power bus, number of leadsH01L23/482 - H01L23/498 take precedence
• CPC Class Codes: H01L 23/62 : Protection against overvoltage, e.g. fuses, shunts
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/40 : of an individual strap connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 25/072 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/181 : Encapsulation

Abstract

A semiconductor device may include at least one semiconductor chip, an encapsulant encapsulating the at least one semiconductor chip, a first power terminal connected to the at least one semiconductor chip within the encapsulant, and a second power terminal electrically connected to the first power terminal via the at least one semiconductor chip within the encapsulant. The first power terminal and the second power terminal each may have a plate shape and may be at least partly opposed to each other within the encapsulant

Claims

1. A semiconductor device comprising:

at least one semiconductor chip;

encapsulant encapsulating the at least one semiconductor chip;

a first power terminal connected to the at least one semiconductor chip within the encapsulant and exposed to outside of the encapsulant; and

a second power terminal electrically connected to the first power terminal via the at least one semiconductor chip within the encapsulant and exposed to the outside of the encapsulant,

wherein

the first power terminal and the second power terminal each have a plate shape and are at least partly opposed to each other within the encapsulant.

2. The semiconductor device according to claim 1, wherein

the encapsulant comprises a protrusion extending along the first power terminal and the second power terminal, and

the first power terminal and the second power terminal are at least partly opposed to each other within the protrusion.

3. The semiconductor device according to claim 2, wherein the first power terminal and the second power terminal are exposed along surfaces of the protrusion.

4. The semiconductor device according to claim 3, wherein the first power terminal and the second power terminal are exposed from the protrusion in opposite directions to each other.

5. The semiconductor device according to claim 3, wherein the first power terminal and the second power terminal are exposed from the protrusion in a same direction and at different positions in a longitudinal direction of the protrusion.

6. The semiconductor device according to claim 2, wherein each of the first power terminal and the second power terminal comprises a protruding end that protrudes from the protrusion of the encapsulant.

7. The semiconductor device according to claim 6, wherein the protruding end of the first power terminal and the protruding end of the second power terminal protrude from the protrusion of the encapsulant along a common plane.

8. The semiconductor device according to claim 7, wherein each of the first power terminal and the second power terminal comprises a bent portion within the protrusion of the encapsulant such that the protruding ends are located in the common plane.

9. The semiconductor device according to claim 6, wherein the protruding end of the first power terminal and the protruding end of the second power terminal protrude from the protrusion of the encapsulant in different directions from each other.

10. The semiconductor device according to claim 6, wherein the protruding end of the first power terminal and the protruding end of the second power terminal protrude from the protrusion of the encapsulant in a same direction.

11. The semiconductor device according to claim 1, wherein the at least one semiconductor chip includes a plurality of semiconductor chips.

12. The semiconductor device according to claim 11, further comprising:

a first conductor plate electrically connected to each of the plurality of semiconductor chips within the encapsulant; and

a second conductor plate opposed to the first conductor plate via the plurality of semiconductor chips and electrically connected to each of the plurality of semiconductor chips within the encapsulant,

wherein the first power terminal is electrically connected to the first conductor plate within the encapsulant, and

the second power terminal is electrically connected to the second conductor plate within the encapsulant.

13. The semiconductor device according to claim 12, wherein at least one of the first conductor plate and the second conductor plate comprises an opening located between corresponding one of the first power terminal and the second power terminal and one of the plurality of semiconductor chips closest to the corresponding one of the first power terminal or the second power terminal.

14. The semiconductor device according to claim 13, wherein

the at least one of the first conductor plate and the second conductor plate comprises a thick portion and a thin portion that is thinner than the thick portion, and

the plurality of semiconductor chips is located on the thick portion and the opening is located within the thin portion.