ESD PROTECTION SILICON CONTROLLED RECTIFIER DEVICE
First Claim
1. An ESD protection SCR device comprising:
- an epitaxial layer provided on a semiconductor substrate having a P-type conductivity, the epitaxial layer having the P-type conductivity;
a plurality of element isolation layers provided on the epitaxial layer, the plurality of element isolation layers arranged to divide the epitaxial layer into an anode region and a cathode region;
a first well having an N-type conductivity, the first well provided in a portion of the epitaxial layer corresponding to the anode region;
a first impurity region provided on a surface of the first well, the first impurity region being connected to an anode terminal and having the P-type conductivity at a level higher than semiconductor substrate;
a second well having the P-type conductivity, the second well provided in a portion of the epitaxial layer corresponding to the cathode region;
a second impurity region provided on a surface of the second well, the second impurity region being connected to a cathode terminal and having the N-type conductivity at a level higher than the first well; and
a floating well having the N-type conductivity, buried in the epitaxial layer.
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Accused Products
Abstract
An ESD protection SCR device includes an epitaxial layer provided on a P-type semiconductor substrate, the epitaxial layer having the P-type conductivity, element isolation layers provided on the epitaxial layer, the element isolation layers dividing the epitaxial layer into an anode region and a cathode region, a first well of an N-type conductivity, provided in a portion of the epitaxial layer corresponding to the anode region, a first impurity region provided on a surface of the first well, the first impurity region being connected to an anode terminal and having a high concentration P-type conductivity, a second well of the P-type conductivity, provided in a portion of the epitaxial layer corresponding to the cathode region, a second impurity region provided on a surface of the second well, the second impurity region being connected to a cathode terminal and having a high concentration N-type conductivity, and a floating well of the N-type conductivity, buried in the epitaxial layer.
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11 Claims
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1. An ESD protection SCR device comprising:
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an epitaxial layer provided on a semiconductor substrate having a P-type conductivity, the epitaxial layer having the P-type conductivity; a plurality of element isolation layers provided on the epitaxial layer, the plurality of element isolation layers arranged to divide the epitaxial layer into an anode region and a cathode region; a first well having an N-type conductivity, the first well provided in a portion of the epitaxial layer corresponding to the anode region; a first impurity region provided on a surface of the first well, the first impurity region being connected to an anode terminal and having the P-type conductivity at a level higher than semiconductor substrate; a second well having the P-type conductivity, the second well provided in a portion of the epitaxial layer corresponding to the cathode region; a second impurity region provided on a surface of the second well, the second impurity region being connected to a cathode terminal and having the N-type conductivity at a level higher than the first well; and a floating well having the N-type conductivity, buried in the epitaxial layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. An ESD protection SCR device comprising:
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an epitaxial layer provided on semiconductor substrate having a P-type conductivity, the epitaxial layer having the P-type conductivity; an element isolation layer provided on the epitaxial layer, the element isolation layer separating the epitaxial layer into an anode region and a cathode region; a first well having an N-type conductivity and provided in a portion of the epitaxial layer corresponding to the anode region; a first impurity region provided on a surface of the first well, the first impurity region being connected to an anode terminal and having a P-type conductivity higher than that of the semiconductor substrate; a second well having the P-type conductivity and provided in a portion of the epitaxial layer corresponding to the cathode region; a second impurity region provided on a surface of the second well, the second impurity region being connected to a cathode terminal and having the N-type conductivity at a level higher than that of the first well; a floating well having the N-type conductivity, wherein the floating well is buried in the epitaxial layer; and a shallow well positioned at a lower portion of the first well and spaced apart from the first impurity region, the shallow well having the N-type conductivity.
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Specification