IMAGE SENSORS AND ELECTRONIC DEVICES
First Claim
1. An image sensor, comprising:
- a photoelectric device configured to selectively absorb light associated with a first wavelength spectrum, the first wavelength spectrum associated with a first color of three primary colors;
a semiconductor substrate stacked with the photoelectric device, the semiconductor substrate includinga first photo-sensing device configured to sense light associated with a second wavelength spectrum, the second wavelength spectrum associated with a second color of the three primary colors, anda second photo-sensing device configured to sense light associated with a third wavelength spectrum, the third wavelength spectrum associated with a third color of the three primary colors;
a first color filter corresponding to the first photo-sensing device, the first color filter configured to selectively transmit light associated with the first wavelength spectrum and light associated with the second wavelength spectrum; and
a second color filter corresponding to the second photo-sensing device, the second color filter configured to selectively transmit light associated with the third wavelength spectrum,wherein the first color, the second color, and the third color are different from each other,wherein the first photo-sensing device and the second photo-sensing device have different thicknesses, different depths from a surface of the semiconductor substrate, or different thicknesses and different depths from the surface of the semiconductor substrate,wherein each photo-sensing device of the first photo-sensing device and the second photo-sensing device includesan upper surface that is proximate to the surface of the semiconductor substrate,a lower surface facing the upper surface, the lower surface distal to the surface of the semiconductor substrate, anda thickness area between the upper surface and the lower surface, andwherein at least one part of the thickness area of the first photo-sensing device overlaps at least one part of the thickness area of the second photo-sensing device in a direction extending substantially parallel to the surface of the semiconductor substrate.
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Accused Products
Abstract
An image sensor may include a photoelectric device configured to selectively absorb light associated with a first color of three primary colors, a semiconductor substrate that is stacked with the photoelectric device and includes first and second photo-sensing devices configured to sense light associated with second and third colors of three primary colors. The first and second photo-sensing devices may have different thicknesses, different depths from a surface of the semiconductor substrate, or different thicknesses and different depths from the surface of the semiconductor substrate. At least one part of a thickness area of the first photo-sensing device may overlap at least one part of a thickness area of the second photo-sensing device in a parallel direction extending substantially parallel to the surface of the semiconductor substrate.
5 Citations
35 Claims
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1. An image sensor, comprising:
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a photoelectric device configured to selectively absorb light associated with a first wavelength spectrum, the first wavelength spectrum associated with a first color of three primary colors; a semiconductor substrate stacked with the photoelectric device, the semiconductor substrate including a first photo-sensing device configured to sense light associated with a second wavelength spectrum, the second wavelength spectrum associated with a second color of the three primary colors, and a second photo-sensing device configured to sense light associated with a third wavelength spectrum, the third wavelength spectrum associated with a third color of the three primary colors; a first color filter corresponding to the first photo-sensing device, the first color filter configured to selectively transmit light associated with the first wavelength spectrum and light associated with the second wavelength spectrum; and a second color filter corresponding to the second photo-sensing device, the second color filter configured to selectively transmit light associated with the third wavelength spectrum, wherein the first color, the second color, and the third color are different from each other, wherein the first photo-sensing device and the second photo-sensing device have different thicknesses, different depths from a surface of the semiconductor substrate, or different thicknesses and different depths from the surface of the semiconductor substrate, wherein each photo-sensing device of the first photo-sensing device and the second photo-sensing device includes an upper surface that is proximate to the surface of the semiconductor substrate, a lower surface facing the upper surface, the lower surface distal to the surface of the semiconductor substrate, and a thickness area between the upper surface and the lower surface, and wherein at least one part of the thickness area of the first photo-sensing device overlaps at least one part of the thickness area of the second photo-sensing device in a direction extending substantially parallel to the surface of the semiconductor substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 27)
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18. An image sensor, comprising:
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a semiconductor substrate including a first photo-sensing device and a second photo-sensing device, the first and second photo-sensing devices configured to sense light associated with different wavelength spectra, the different wavelength spectra associated with different colors of three primary colors; a first color filter corresponding to the first photo-sensing device; and a second color filter corresponding to the second photo-sensing device, wherein the first color filter is a cyan filter configured to selectively transmit light associated with blue and green wavelength spectra, a magenta filter configured to selectively transmit light associated with blue and red wavelength spectra, or a yellow filter configured to selectively transmit light associated with red and green wavelength spectra, wherein the second color filter is a red filter configured to selectively transmit light associated with a red wavelength spectrum, a green filter configured to selectively transmit light associated with a green wavelength spectrum, or a blue filter configured to selectively transmit light associated with a blue wavelength spectrum, and the first photo-sensing device and the second photo-sensing device have different thicknesses, different depths from a surface of the semiconductor substrate, or different thicknesses and different depths from the surface of the semiconductor substrate. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 28)
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29. An image sensor, comprising:
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a photoelectric device configured to selectively absorb light associated with a first wavelength spectrum, the first wavelength spectrum associated with a first color of three primary colors, a semiconductor substrate stacked with the photoelectric device, the semiconductor substrate including a first photo-sensing device configured to sense light associated with a second wavelength spectrum, the second wavelength spectrum associated with a second color of the three primary colors, and a second photo-sensing device configured to sense light associated with a third wavelength spectrum, the third wavelength spectrum associated with a third color of the three primary colors, wherein the first color, the second color, and the third color are different from each other, wherein the first photo-sensing device and the second photo-sensing device have different thicknesses, different depths from a surface of the semiconductor substrate, or different thicknesses and different depths from the surface of the semiconductor substrate. - View Dependent Claims (30, 31, 32, 33, 34, 35)
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Specification