HIGH VOLTAGE CAPACITOR AND METHOD

• US 20190319087A1
• Filed: 06/24/2019
• Published: 10/17/2019
• Est. Priority Date: 04/07/2014
• Status: Active Grant

• Current Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Original Assignee: Semiconductor Components Industries LLC (ON Semiconductor Corporation)
• Inventors: BURTON, Richard Scott, PTACEK, Karel
• Granted Patent: US 11,018,216 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/0805 Capacitors only
• CPC Class Codes: H01L 28/60 Electrodes

Abstract

In accordance with an embodiment, an electrical element includes a first portion of a first dielectric material between a first portion of a first electrical conductor and a first portion of a second electrical conductor and a second portion of the first dielectric material between a second portion of the first electrical conductor and a first portion of a third electrical conductor. In accordance with another embodiment, an electrical component has a plurality of dopant regions formed in a semiconductor material, where the dopant regions include a plurality of dopant regions formed in a dopant region of the same conductivity type. A plurality of dopant regions of an opposite conductivity type are formed in corresponding dopant regions of the first conductivity type. A metallization system is formed over the semiconductor material, where a portion of the metallization system contacts the semiconductor material.

Claims

1. An electrical component, comprising:

a first electrical conductor having a first major surface and a second major surface;

a first dielectric material having a first major surface and a second major surface, a first portion of the first major surface of the first dielectric material adjacent the second major surface of the first electrical conductor;

a second electrical conductor having a first major surface and a second major surface, the first major surface of the second electrical conductor adjacent a first portion of the second major surface of the first dielectric material; and

a third electrical conductor having a first major surface and a second major surface, the first major surface of the third electrical conductor adjacent a second portion of the second major surface of the first dielectric material.

2. The electrical component of claim 1, further including:

a second dielectric material having a first major surface and a second major surface, a first portion of the first major surface of the second dielectric material adjacent the second major surface of the second electrical conductor and a second portion of the first major surface of the second dielectric material adjacent the second major surface of the third electrical conductor; and

a fourth electrical conductor having a first major surface and a second major surface, the first major surface of the fourth electrical conductor adjacent a first portion of the second major surface of the second dielectric material.

3. The electrical component of claim 2, further including:

a fifth electrical conductor having a first major surface and a second major surface, a second portion of the first major surface of the first dielectric material adjacent the second major surface of the fifth electrical conductor;

a sixth electrical conductor having a first major surface and a second major surface, the first major surface of the sixth electrical conductor adjacent a third portion of the second major surface of the first dielectric material; and

a seventh electrical conductor having a first major surface and a second major surface, a first portion of the first major surface of the seventh electrical conductor adjacent a second portion of the second major surface of the second dielectric material.

4. The electrical component of claim 3, wherein the first electrical conductor and the fifth electrical conductor are substantially coplanar, the second electrical conductor, the third electrical conductor, and the sixth electrical conductor are substantially coplanar, and the fourth electrical conductor and the seventh electrical conductor are substantially coplanar.

5. The electrical component of claim 3, wherein the fourth electrical conductor is electrically coupled to the first electrical conductor, and the seventh electrical conductor is electrically coupled to the fifth electrical conductor.

6. An electrical component including a high voltage capacitor, comprising:

a semiconductor material of a first conductivity type;

a first dopant region extending into a first portion of the semiconductor material;

a second dopant region extending into a second portion of the semiconductor material and in contact with the first dopant region;

a first electrically conductive structure over the first dopant region;

a second electrically conductive structure over a first portion of the second dopant region;

a first layer of dielectric material over the first electrically conductive structure and the second electrically conductive structure; and

a third electrically conductive structure over a first portion of the first layer of dielectric material, wherein a first portion of the third electrically conductive structure is over the first electrically conductive structure and the first dopant region and a second portion of the third electrically conductive structure is over the second electrically conductive structure and a portion of the second dopant region.

7. The electrical component of claim 6, further including a second layer of dielectric material between the semiconductor material and the first electrically conductive structure and between the semiconductor material and the second electrically conductive material.

8. The electrical component of claim 6, wherein the semiconductor material and the first dopant region are of a first conductivity type and the second dopant region is of a second conductivity type.

9. The electrical component of claim 8, further including a third dopant region of the second conductivity type extending into a third portion of the semiconductor material and laterally spaced apart from the first dopant region, wherein the first electrically conductive structure is over the third dopant region of the second conductivity type.

10. The electrical component of claim 6, further including a second layer of dielectric material over the third electrically conductive structure and over the first layer of dielectric material;

a fourth electrically conductive structure over a first portion of the second layer of dielectric material, wherein a portion of the fourth electrically conductive structure is over a first portion of the third electrically conductive structure; and

a fifth electrically conductive structure over a second portion of the second layer of dielectric material and over the third electrically conductive structure.

11. The electrical component of claim 10, wherein the semiconductor material and the first dopant region are of a first conductivity type and the second dopant region is of a second conductivity type, and further including

a third dopant region of the second conductivity type extending into a third portion of the semiconductor material, wherein the first electrically conductive structure is over the third dopant region of the second conductivity type;

and

a fourth dopant region of the first conductivity type extending into a fourth portion of the semiconductor material, the fourth dopant region of the first conductivity type and in contact with the third dopant region of the second conductivity type.

12. The electrical component of claim 11, further including

a sixth electrically conductive structure, wherein a portion of the sixth electrically conductive structure contacts the semiconductor material;

a seventh electrically conductive structure over the semiconductor material; and

an eighth electrically conductive structure over and in electrical contact with the seventh electrically conductive structure.

13. The electrical component of claim 6, further including a third dopant region extending into a third portion of the semiconductor material, wherein the second electrically conductive structure is over the third dopant region.

14. An electrical component including a high voltage capacitor, comprising:

a semiconductor material of a first conductivity type having a major surface;

a first dopant region of a second conductivity type in a first portion of the semiconductor material;

a second dopant region of the second conductivity type in a first portion of the first dopant region of the second conductivity type;

a third dopant region of the second conductivity type in a second portion of the first dopant region of the second conductivity type, wherein the second dopant region of the second conductivity type is laterally bounded by the third dopant region of the second conductivity type;

a fourth dopant region of the first conductivity type in the third dopant region of the second conductivity type, wherein the fourth dopant region of the first conductivity type abuts the second dopant region of the second conductivity type, and wherein a first p-n junction is formed between the fourth dopant region of the first conductivity type and the second dopant region of the second conductivity type and a second p-n junction is formed between the fourth dopant region of the first conductivity type and the third dopant region of the second conductivity type;

a first layer of dielectric material over the semiconductor material;

a first electrically conductive structure over a first portion of the first layer of dielectric material;

a second layer of dielectric material over the first electrically conductive structure; and

a first electrical conductor over a first portion of the second layer of dielectric material, the first electrical conductor having a first portion and a second portion, the first portion of the first electrical conductor electrically coupled to a first portion of the first electrically conductive structure and the second portion of the first electrical conductor electrically coupled to a first portion of the first dopant region.

15. The electrical component of claim 14, further including:

a third layer of dielectric material over the first electrical conductor; and

a second electrical conductor over a first portion of the third layer of dielectric material and over the first electrical conductor.

16. The electrical component of claim 15, wherein

the second dopant region of the second conductivity type extends into the first portion of the first dopant region of the second conductivity type a distance that is less than a distance that the first dopant region of the second conductivity type extends into the semiconductor material;

the third dopant region of the second conductivity type extends into the first dopant region of the second conductivity a distance that is substantially equal to the distance that the second dopant region of the second conductivity type extends into the first dopant region of the second conductivity type; and

the fourth dopant region of the first conductivity type extends into the third dopant region of the second conductivity a distance that is less than the distance that the second dopant region of the second conductivity type extends into the first dopant region.

17. The electrical component of claim 15, further including:

a second electrically conductive structure over a second portion of the first layer of dielectric material;

a third electrical conductor over a second portion of the second layer of dielectric material; and

a fourth electrical conductor electrically coupled to the second electrically conductive structure through the third electrical conductor.

18. The electrical component of claim 15, further including a fifth dopant region of the second conductivity type in a third portion of the first dopant region of the second conductivity type, the third dopant region of the second conductivity type laterally bounded by the fifth dopant region of the second conductivity type.

19. The electrical component of claim 18, further including:

a sixth dopant region of the first conductivity type in a fourth portion of the first dopant region, wherein a third pn junction is formed between the sixth dopant region of the second conductivity type and the fifth dopant region of the second conductivity type; and

a seventh dopant region of the first conductivity type extending into a fifth portion of the first dopant region, wherein the fifth dopant region of the second conductivity type is laterally positioned between the sixth dopant region of the first conductivity type and the seventh dopant region of the first conductivity type.

20. The electrical component of claim 19, wherein the first electrically conductive structure and the second electrically conductive structure comprise doped polysilicon and the first electrical conductor, the second electrical conductor, the third electrical conductor, and the fourth electrical conductor comprise a metal.