METHOD OF USING THE PHOTODETECTING DEVICE

• US 20190319138A1
• Filed: 06/24/2019
• Published: 10/17/2019
• Est. Priority Date: 08/04/2015
• Status: Active Grant

• Current Assignee: National Chiao Tung University (Government of The Republic of China)
• Original Assignee: National Chiao Tung University (Government of The Republic of China)
• Inventors: YANG, Yuh-Shyong, CHEN, Chien-Hung, LIN, Chih-Heng
• Granted Patent: US 10,770,600 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 31/02162 for filtering or shielding light, e.g. multicolour filters for photodetectors
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/035227 the quantum structure being quantum wires, or nanorods carbon nanotubes H10K85/211
• CPC Class Codes: H01L 31/03685 including microcrystalline silicon, uc-Si
• CPC Class Codes: H01L 31/1129 the device being a field-effect phototransistor
• CPC Class Codes: H01L 31/1136 the device being a metal-insulator-semiconductor field-effect transistor

Abstract

A photodetecting device and method of using the same are provided. Light is used to irradiate the optical filter layer of the photodetecting device and positions of the electrons and the holes in the polycrystalline silicon nano-channel layer are rearranged by the light with a wavelength range capable of passing through the optical filter layer. The current between the source and the drain is changed by rearranging the positions of the electrons and the holes, so as to generate a current difference. The intensity of the light is calculated by the current difference.

Claims

1. A method of using a photodetecting device to perform photo detection, comprising:

providing a photodetecting device comprising;

a transistor comprising a source, a drain and a gate;

a polycrystalline silicon nano-channel layer connecting the source and the drain, wherein the polycrystalline silicon nano-channel layer has a light-receiving surface;

an optical filter layer over the light-receiving surface of the polycrystalline silicon nano-channel layer, wherein the optical filter layer transmits a light within a wavelength range;

an isolation layer between the gate and the polycrystalline silicon nano-channel layer; and

a solution covering the source, the drain and the optical filter layer and wrapping around the gate;

using light to irradiate the optical filter layer of the photodetecting device and rearranging positions of the electrons and the holes in the polycrystalline silicon nano-channel layer by the light with a wavelength range capable of passing through the optical filter layer;

changing the current between the source and the drain by rearranging the positions of the electrons and the holes, so as to generate a current difference; and

calculating the intensity of the light by the current difference.

2. The method of claim 1, further comprising reacting a sample with a receptor to generate the light.

3. The method of claim 2, further comprising modifying the receptor on the filter dye layer.

4. The method of claim 1, before irradiating the optical filter layer of the photodetecting device by the light further comprising applying a voltage on the gate to rearrange the positions of the electrons and the holes in the polycrystalline silicon nano-channel layer and forming a stable current between the source and the drain.