PHOTO-DETECTION DEVICE, PHOTO-DETECTION SYSTEM, AND MOBILE APPARATUS
First Claim
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1. A photo-detection device comprising:
- a semiconductor substrate having a first face; and
a pixel unit in which at least one pixel having an avalanche diode is arranged in the semiconductor substrate,wherein the avalanche diode comprises;
a first semiconductor region of a first conductivity type arranged at a first depth;
a second semiconductor region arranged in contact with the first semiconductor region at the first depth,a third semiconductor region arranged at a second depth that is deeper than the first depth relative to the first face,a fourth semiconductor region of a second conductivity type arranged in contact with the third semiconductor region at the second depth, the second conductivity type being the opposite conductivity type to the first conductivity type, anda fifth semiconductor region arranged at a third depth that is deeper than the second depth relative to the first face,wherein the first semiconductor region overlaps at least a part of the third semiconductor region in a planar view when viewed from a direction perpendicular to the first face, andwherein the second semiconductor region overlaps at least a part of the fourth semiconductor region in the planar view,the photo-detection device further comprising a sixth semiconductor region of the second conductivity type arranged so as to surround the first semiconductor region to the fifth semiconductor region in the planar view,wherein an electric potential supplied to the fourth semiconductor region is different from an electric potential supplied to the sixth semiconductor region.
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Abstract
Provided is a photo-detection device including: a semiconductor substrate having a first face; a pixel unit in which a pixel having an avalanche diode is arranged in the semiconductor substrate; and a sixth semiconductor region arranged so as to surround a first semiconductor region to a fifth semiconductor region that form the avalanche diode in a planar view from a direction perpendicular to the first face, and an electric potential that is different from the electric potential supplied to the avalanche diode is supplied to the sixth semiconductor region.
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Citations
20 Claims
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1. A photo-detection device comprising:
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a semiconductor substrate having a first face; and a pixel unit in which at least one pixel having an avalanche diode is arranged in the semiconductor substrate, wherein the avalanche diode comprises; a first semiconductor region of a first conductivity type arranged at a first depth; a second semiconductor region arranged in contact with the first semiconductor region at the first depth, a third semiconductor region arranged at a second depth that is deeper than the first depth relative to the first face, a fourth semiconductor region of a second conductivity type arranged in contact with the third semiconductor region at the second depth, the second conductivity type being the opposite conductivity type to the first conductivity type, and a fifth semiconductor region arranged at a third depth that is deeper than the second depth relative to the first face, wherein the first semiconductor region overlaps at least a part of the third semiconductor region in a planar view when viewed from a direction perpendicular to the first face, and wherein the second semiconductor region overlaps at least a part of the fourth semiconductor region in the planar view, the photo-detection device further comprising a sixth semiconductor region of the second conductivity type arranged so as to surround the first semiconductor region to the fifth semiconductor region in the planar view, wherein an electric potential supplied to the fourth semiconductor region is different from an electric potential supplied to the sixth semiconductor region. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 14, 16, 17, 19)
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9. A photo-detection device comprising:
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a plurality of pixels each including an avalanche diode that has a PN junction formed by a third semiconductor region of a first conductivity type and a fourth semiconductor region of a second conductivity type, the second conductivity type being the opposite conductivity type to the first conductivity type; and an isolation portion that has a sixth semiconductor region of the second conductivity type and electrically isolates each of the plurality of pixels, wherein a first electric potential is supplied to the third semiconductor region, wherein a second electric potential that is different from the first electric potential is supplied to the fourth semiconductor region such that an electric potential difference causing a reverse bias is applied to the PN junction, and wherein a third electric potential that is different from both the first electric potential and the second electric potential is supplied to the sixth semiconductor region. - View Dependent Claims (10, 11, 12, 13, 15, 18, 20)
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Specification
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Current AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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Original AssigneeCanon Kabushiki Kaisha (Canon Inc.)
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InventorsFukuchi, Yusuke
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current
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