HIGH SENSITIVITY OPTOELECTRONIC DEVICE FOR DETECTING CHEMICAL SPECIES AND RELATED MANUFACTURING METHOD

• US 20190319159A1
• Filed: 04/16/2019
• Published: 10/17/2019
• Est. Priority Date: 04/17/2018
• Status: Active Grant

• Current Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Original Assignee: STMicroelectronics SRL (STMicroelectronics NV)
• Inventors: MAZZILLO, Massimo Cataldo, CONDORELLI, Giovanni, RENNA, Lucio
• Granted Patent: US 11,171,255 B2
• Time in Patent Office: Days
• CPC Class Codes: G01J 1/44 Electric circuits for command of an exposure part G03B7/02
• CPC Class Codes: G01J 2001/4295 using a physical effect not covered by other subgroups of G01J1/42
• CPC Class Codes: G01J 2001/442 Single-photon detection or photon counting
• CPC Class Codes: G01J 2001/4466 Avalanche
• CPC Class Codes: G01J 2001/448 Array [CCD]
• CPC Class Codes: G01N 27/12 of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid , for detecting components in the fluid
• CPC Class Codes: H01L 27/1446 in a repetitive configuration
• CPC Class Codes: H01L 31/02027 for devices working in avalanche mode
• CPC Class Codes: H01L 31/022408 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/024 Arrangements for cooling, heating, ventilating or temperature compensation for photovoltaic devices H01L31/052
• CPC Class Codes: H01L 31/035281 Shape of the body
• CPC Class Codes: H01L 31/107 the potential barrier working in avalanche mode, e.g. avalanche photodiodes
• CPC Class Codes: H01L 31/145 the semiconductor device sensitive to radiation being characterised by at least one potential-jump barrier or surface barrier
• CPC Class Codes: H01L 31/1864 Annealing

Abstract

A device for detecting a chemical species including a Geiger mode avalanche photodiode, which comprises a body of semiconductor material delimited by a front surface. The semiconductor body includes: a cathode region having a first type of conductivity, which forms the front surface; and an anode region having a second type of conductivity, which extends within the cathode region starting from the front surface. The detection device further includes: a dielectric region, which extends on the front surface; and a sensitive region, which is arranged on top of the dielectric region and electrically coupled to the anode region and has a resistance that depends upon the concentration of the chemical species.

Claims

1. A device for detecting a chemical species, comprising:

a body of semiconductor material having a front surface;

a first Geiger mode avalanche photodiode including;

a cathode region having a first type of conductivity in the body, which forms the front surface; and

an anode region having a second type of conductivity in the body, which extends in the cathode region starting from the front surface;

a dielectric region which extends on the front surface; and

a sensitive region which is arranged on the dielectric region, electrically coupled to the anode region, and has a resistance that depends upon a concentration of said chemical species.

2. The detection device according to claim 1, further comprising a heater element configured to generate heat and arranged within the dielectric region, underneath the sensitive region.

3. The detection device according to claim 2, wherein the semiconductor body has a bottom surface;

said detection device further comprising a cavity, which extends through the semiconductor body, starting from the bottom surface, and through a portion of the dielectric region, said sensitive region being overlaid on said cavity.

4. The detection device according to claim 1, further comprising a first electrode and a second electrode arranged on the dielectric region, the sensitive region being electrically interposed between the first and second electrodes, the first electrode being electrically coupled to the anode region, the second electrode being configured to bias the Geiger mode avalanche photodiode when the second electrode is biased.

5. The detection device according to claim 4, wherein the first and second electrodes are arranged in a comb-fingered way and the sensitive region is arranged at least in part between the first and second electrodes.

6. The detection device according to claim 1, wherein the sensitive region is made of a metal oxide.

7. The detection device according to claim 1, further comprising an intermediate semiconductor region having the second type of conductivity, which is interposed between the anode region and the dielectric region;

and wherein the sensitive region is electrically coupled to the anode region through the intermediate semiconductor region.

8. The device according to claim 1, wherein said first type of conductivity is a conductivity of an N type, and wherein said second type of conductivity is a conductivity of a P type.

9. A device, comprising:

a die (100) of semiconductor material having a front surface;

an array of detection devices, each detection device including;

a first Geiger mode avalanche photodiode including;

a cathode region having a first type of conductivity in the body, which forms the front surface; and

an anode region having a second type of conductivity in the body, which extends in the cathode region starting from the front surface;

a dielectric region which extends on the front surface; and

a sensitive region which is arranged on the dielectric region, electrically coupled to the anode region, and has a resistance that depends upon a concentration of said chemical species.

10. The device according to claim 9, wherein each detection device includes a heater element configured to generate heat and arranged within the dielectric region of the detection device, underneath the sensitive region of the detection device.

11. The device according to claim 10, wherein the semiconductor body has a bottom surface;

each detection device further including a cavity, which extends through the semiconductor body, starting from the bottom surface, and through a portion of the dielectric region of the detection device, said sensitive region of the detection device being overlaid on said cavity.

13. The device according to claim 10, further comprising:

an integration stage configured to generate an output signal indicating, for each electrical pulse of the timing signal, an integral of the corresponding current pulse in a time window, a start of which depends upon said electrical pulse, said time window having a fixed duration; and

a processing stage configured to determine an estimate of the concentration of the chemical species based on said output signal.

12. A detection system comprising:

a light source;

a driving stage configured to control the light source with a timing signal including a plurality of electrical pulses so as to generate a plurality of optical pulses;

a device configured to receive said optical pulses and generate a current signal including a plurality of corresponding current pulses, the device including;

a die of semiconductor material having a front surface;

an array of detection devices, each detection device including;

a first Geiger mode avalanche photodiode including;

a cathode region having a first type of conductivity in the body, which forms the front surface; and

an anode region having a second type of conductivity in the body, which extends in the cathode region starting from the front surface;

a dielectric region which extends on the front surface; and

a sensitive region which is arranged on the dielectric region, electrically coupled to the anode region, and has a resistance that depends upon a concentration of said chemical species.

14. A method for manufacturing a device for detecting a chemical species, the method comprising:

forming a Geiger mode avalanche photodiode in a body of semiconductor material delimited by a front surface, wherein forming the Geiger mode avalanche photodiode includes;

forming a cathode region, having a first type of conductivity, in the body and extending from the front surface; and

forming an anode region having a second type of conductivity, which extends in the cathode region starting from the front surface;

forming a dielectric region on the front surface; and

forming, on the dielectric region, a sensitive region which is electrically coupled to the anode region and has a resistance that depends upon a concentration of said chemical species.

15. The manufacturing method according to claim 14, further comprising forming, within the dielectric region and underneath the sensitive region, a heater element configured to generate heat.

16. The manufacturing method according to claim 15, wherein the semiconductor body has a bottom surface, said method further comprising forming a cavity that extends through the semiconductor body, starting from the bottom surface, and through a portion of the dielectric region, said cavity being underneath the sensitive region.

17. The manufacturing method according to claim 16, further comprising forming, on the dielectric region, a first electrode and a second electrode, the first electrode being electrically coupled to the anode region;

wherein forming the sensitive region includes electrically interposing the sensitive region between the first and second electrodes.

18. The manufacturing method according to claim 17, wherein forming the first electrode and the second electrode comprises forming the first and second electrodes in a comb-fingered way;

and

forming the sensitive region comprises arranging the sensitive region at least in part between the first and second electrodes.

19. The manufacturing method according to claim 14, further comprising forming, between the anode region and the dielectric region, an intermediate semiconductor region having the second type of conductivity, which is electrically interposed between the sensitive region and the anode region.

20. The manufacturing method according to claim 19, wherein forming the anode region comprises:

after carrying forming the cathode region, forming the intermediate semiconductor region; and

carrying out a thermal annealing after forming the intermediate semiconductor region.