METHOD AND SYSTEM FOR ENGINEERING THE SECONDARY BARRIER LAYER IN DUAL MAGNETIC JUNCTIONS
First Claim
1. A magnetic junction residing on a substrate and usable in a magnetic device, the magnetic junction comprising:
- a first reference layer;
a main barrier layer;
a free layer, the free layer being switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction, the main barrier layer residing between the first reference layer and the free layer;
an engineered secondary barrier layer having a plurality of regions having a reduced resistance less than a resistance of the engineered secondary barrier layer; and
a second reference layer, the secondary nonmagnetic barrier layer being between the free layer and the second reference layer, each of the free layer, the first reference layer and the second reference layer having a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy.
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Abstract
A magnetic junction, a memory using the magnetic junction and method for providing the magnetic junction are described. The magnetic junction includes first and second reference layers, a main barrier layer, a free layer, an engineered secondary barrier layer and a second reference layer. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The main barrier layer is between the first reference layer and the free layer. The secondary barrier layer is between the free layer and the second reference layer. The engineered secondary barrier layer has a resistance and a plurality of regions having a reduced resistance less than the resistance. The free and reference layers each has a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy.
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Citations
18 Claims
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1. A magnetic junction residing on a substrate and usable in a magnetic device, the magnetic junction comprising:
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a first reference layer; a main barrier layer; a free layer, the free layer being switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction, the main barrier layer residing between the first reference layer and the free layer; an engineered secondary barrier layer having a plurality of regions having a reduced resistance less than a resistance of the engineered secondary barrier layer; and a second reference layer, the secondary nonmagnetic barrier layer being between the free layer and the second reference layer, each of the free layer, the first reference layer and the second reference layer having a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A magnetic memory residing on a substrate and comprising:
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a plurality of magnetic storage cells, each of the plurality of magnetic storage cells including at least one magnetic junction, each of the at least one magnetic junction including a first reference layer, a main barrier layer, a free layer, an engineered secondary barrier layer and a second reference layer, the free layer being switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction, the main barrier layer residing between the first reference layer and the free layer, the engineered secondary barrier layer having a resistance, the engineered secondary barrier layer having a plurality of regions having a reduced resistance less than the resistance, the secondary barrier layer being between the free layer and the second reference layer, each of the free layer, the first reference layer and the second reference layer having a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy; and a plurality of bit lines coupled with the plurality of magnetic storage cells.
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12. A method for providing a magnetic junction usable in a magnetic device, the method comprising:
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providing a first reference layer; providing a main barrier layer; providing a free layer, the free layer being switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction, the main barrier layer residing between the first reference layer and the free layer; providing an engineered secondary barrier layer having a resistance, the engineered secondary barrier layer having a plurality of regions having a reduced resistance less than the resistance; providing a second reference layer, the secondary barrier layer being between the free layer and the second reference layer, each of the free layer, the first reference layer and the second reference layer having a perpendicular magnetic anisotropy energy and an out-of-plane demagnetization energy less than the perpendicular magnetic anisotropy energy. - View Dependent Claims (13, 14, 15, 16, 17, 18)
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Specification