QUANTUM DOT DEVICE AND ELECTRONIC DEVICE

• US 20190319208A1
• Filed: 08/20/2018
• Published: 10/17/2019
• Est. Priority Date: 04/12/2018
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Original Assignee: Samsung Electronics Co. Ltd. (Samsung Group)
• Inventors: HAN, Moon Gyu, CHUNG, Dae Young, SEO, Hongkyu, KIM, Kwanghee, PARK, Kun Su, PARK, Sujin, JANG, Eun Joo
• Granted Patent: US 10,446,782 B1
• Time in Patent Office: Days
• CPC Class Codes: C09K 11/025 non-luminescent particle coatings or suspension media
• CPC Class Codes: C09K 11/70 containing phosphorus
• CPC Class Codes: C09K 11/883 with zinc or cadmium
• CPC Class Codes: H10K 50/115 comprising active inorganic nanostructures, e.g. luminescent quantum dots
• CPC Class Codes: H10K 50/15 Hole transporting layers
• CPC Class Codes: H10K 50/16 Electron transporting layers
• CPC Class Codes: H10K 50/17 Carrier injection layers
• CPC Class Codes: H10K 50/171 Electron injection layers
• CPC Class Codes: H10K 50/18 Carrier blocking layers
• CPC Class Codes: H10K 50/181 Electron blocking layers
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/15 characterised by the solvent used
• CPC Class Codes: H10K 85/1135 Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
• CPC Class Codes: H10K 85/321 Metal complexes comprising a group IIIA element, e.g. Tris (8-hydroxyquinoline) gallium [Gaq3]
• CPC Class Codes: H10K 85/381 Metal complexes comprising a group IIB metal element, e.g. comprising cadmium, mercury or zinc

Abstract

A quantum dot device includes a first electrode and a second electrode facing each other, a quantum dot layer disposed between the first electrode and the second electrode and comprising a plurality of quantum dots, a first charge auxiliary layer disposed between the first electrode and the quantum dot layer and contacting the quantum dot layer, and a second charge auxiliary layer disposed between the second electrode and the quantum dot layer and contacting the quantum dot layer, wherein the plurality of quantum dots includes a quantum dot including an organic ligand on a surface thereof, the organic ligand including a hydrophilic functional group at a terminal end.

Claims

1. A quantum dot device, comprising

a first electrode and a second electrode facing each other,

a quantum dot layer disposed between the first electrode and the second electrode and comprising a plurality of quantum dots,

a first charge auxiliary layer disposed between the first electrode and the quantum dot layer, the first charge auxiliary layer contacting the quantum dot layer, and

a second charge auxiliary layer disposed between the second electrode and the quantum dot layer, the second charge auxiliary layer contacting the quantum dot layer,

wherein the plurality of quantum dots comprises a quantum dot comprising an organic ligand on a surface thereof, the organic ligand comprising a hydrophilic functional group at a terminal end,

wherein the organic ligand is represented by Chemical Formula 1:

*-M-(L-X)_n 

 

Chemical Formula 1

wherein, in Chemical Formula 1,

M is a moiety coordination-bonded with the quantum dot,

each L is the same or different, and is a substituted or unsubstituted C1 to C30 linear or branched alkylene group, a substituted or unsubstituted C2 to C30 linear or branched alkenylene group, a substituted or unsubstituted C2 to C30 linear or branched alkynylene group, or a combination thereof,

each X is the same or different, and is the hydrophilic functional group comprising a hydroxyl group, an amino group, a carbonyl group, a carboxylic acid group or a salt thereof, a sulfhydryl group, or a phosphoric acid group or a salt thereof,

n is an integer ranging from 1 to 3, and

* is a bonding point with the quantum dot.

2. The quantum dot device of claim 1, wherein the hydrophilic functional group comprises a hydroxyl group, a sulfhydryl group, or a combination thereof.

4. The quantum dot device of claim 1, wherein the M of Chemical Formula 1 comprises a moiety derived from SH, COOH, COO, NH₂, NH, N, H₂PO, HPO, PO, H₂P, HP, P, OH, PO(OH)₂, POOH, or a combination thereof.

5. The quantum dot device of claim 1, wherein the organic ligand is a substituted or unsubstituted organic ligand that comprises a substituted or unsubstituted mercaptomethanol, a substituted or unsubstituted mercaptoethanol, a substituted or unsubstituted mercaptopropanol, a substituted or unsubstituted mercaptobutanol, a substituted or unsubstituted mercaptopentanol, a substituted or unsubstituted mercaptohexanol, a substituted or unsubstituted mercaptoheptanol, a substituted or unsubstituted mercaptooctanol, a substituted or unsubstituted mercaptononanol, a substituted or unsubstituted mercaptodecanol, a substituted or unsubstituted mercaptoundecanol, a substituted or unsubstituted mercaptododecanol, a substituted or unsubstituted mercaptotridecanol, a substituted or unsubstituted mercaptoethane diol, a substituted or unsubstituted mercaptopropane diol, a substituted or unsubstituted mercaptobutane diol, a substituted or unsubstituted mercaptopentane diol, or a combination thereof,

wherein at least one hydrogen of the substituted organic ligand is substituted by a C1 to C10 alkyl group.

6. The quantum dot device of claim 1, wherein an average surface roughness of the quantum dot layer is less than or equal to about 4 nanometers.

7. The quantum dot device of claim 1, wherein the first charge auxiliary layer comprises a hole transport material, an electron blocking material, or a combination thereof, and

wherein the hole transport material and the electron blocking material are each independently dispersible or soluble in a hydrophobic solvent.

8. The quantum dot device of claim 1, wherein the second charge auxiliary layer comprises an electron transport material that is dispersible in a hydrophobic solvent.

9. The quantum dot device of claim 8, wherein the electron transport material comprises a low molecular weight organic compound, a polymer, an inorganic material, or a combination thereof.

10. The quantum dot device of claim 1, further comprising a first charge injection layer disposed between the first electrode and the first charge auxiliary layer.

11. The quantum dot device of claim 1, further comprising a second charge injection layer disposed between the second electrode and the second charge auxiliary layer.

12. The quantum dot device of claim 1, wherein the first charge auxiliary layer is a hole transport layer, an electron blocking layer, or a combination thereof;

and

the second charge auxiliary layer is an electron transport layer.

21. An electronic device comprising the quantum dot device of claim 1.

3. (canceled)

13. A method of manufacturing a quantum dot device, comprising

forming a first electrode,

forming a first charge auxiliary layer on the first electrode,

forming a quantum dot layer on the first charge auxiliary layer,

forming a second charge auxiliary layer on the quantum dot layer, and

forming a second electrode on the second charge auxiliary layer,

wherein the forming of the quantum dot layer comprises coating a quantum dot solution on a surface of the first charge auxiliary layer, the quantum dot solution comprising

a quantum dot comprising an organic ligand on a surface thereof, the organic ligand comprising a hydrophilic functional group at a terminal end;

and

a hydrophilic solvent.

14. The method of claim 13, wherein the hydrophilic functional group comprises a hydroxyl group, an amino group, a carbonyl group, a carboxylic acid group or a salt thereof, a sulfhydryl group, a phosphoric acid group or a salt thereof, or a combination thereof.

15. The method of claim 13, wherein the hydrophilic solvent comprises a solvent comprising a polarity index of greater than or equal to about 5.0.

16. The method of claim 13, wherein the hydrophilic solvent comprises water, alcohol, acetonitrile, dimethyl formamide, or a combination thereof.

17. The method of claim 13, wherein the forming of the first charge auxiliary layer comprises coating a first charge auxiliary solution on a surface of the first electrode,

wherein the first charge auxiliary solution comprises

a hydrophobic solvent;

and

a hole transport material, an electron blocking material, or a combination thereof, wherein the hole transport material and the electron blocking material are each independently dispersible or soluble in the hydrophobic solvent.

18. The method of claim 17, wherein the hydrophobic solvent comprises hexane, diethyl ether, methylene chloride, benzene, toluene, xylene, chloroform, octane, nonane, cyclohexane, acetone, or a combination thereof.

19. The method of claim 13, wherein the forming of the second charge auxiliary layer comprises coating a second charge auxiliary solution on a surface of the quantum dot layer,

wherein the second charge auxiliary solution comprises

a hydrophobic solvent;

and

an electron transport material that is dispersible or soluble in the hydrophobic solvent.

20. The method of claim 19, wherein the hydrophobic solvent comprises hexane, diethyl ether, methylene chloride, benzene, toluene, xylene, chloroform, octane, nonane, cyclohexane, acetone, or a combination thereof.