DEPOSITION MASK

• US 20190323117A1
• Filed: 10/24/2017
• Published: 10/24/2019
• Est. Priority Date: 11/18/2016
• Status: Active Grant

• Current Assignee: Dai Nippon Printing Company Limited
• Original Assignee: Dai Nippon Printing Company Limited
• Inventors: IKENAGA, Chikao
• Granted Patent: US 11,220,736 B2
• Time in Patent Office: Days
• CPC Class Codes: C23C 14/04 Coating on selected surface areas, e.g. using masks
• CPC Class Codes: C23C 14/042 using masks
• CPC Class Codes: C23C 14/24 Vacuum evaporation
• CPC Class Codes: C23F 1/02 Local etching
• CPC Class Codes: H05B 33/10 Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/166 using selective deposition, e.g. using a mask

Abstract

A deposition mask includes a first surface facing to the deposition target substrate, and a second surface opposite to the first surface. The deposition mask includes: an effective area in which a plurality of through holes are formed and a longitudinal direction in which one or more of the effective areas are arranged along the longitudinal direction. At least in a central area of the longitudinal direction, the deposition mask is warped to be convex on the first surface in a cross section orthogonal to the longitudinal direction.

Claims

1. A deposition mask used in depositing a depositing material onto a deposition target substrate, comprising a first surface facing to the deposition target substrate, and a second surface opposite to the first surface,

wherein:

the deposition mask includes;

an effective area in which a plurality of through holes are formed; and

a longitudinal direction in which one or more of the effective areas are arranged along the longitudinal direction;

wherein;

at least in a central area of the longitudinal direction, the deposition mask is warped to be convex on the first surface in a cross section orthogonal to the longitudinal direction.

2. The deposition mask according to claim 1, further including a peripheral area surrounding the effective area,

wherein a value of a difference (D2−

D1) between a distance D2 and a distance D1 is larger than 0 mm and smaller than 0.05 mm, in which

out of one or more total pitch marks disposed on one side of the width direction of the effective area in the peripheral area, a total pitch mark closest to the central portion of the longitudinal direction is represented as a first total pitch mark;

out of one or more total pitch marks disposed on the other side of the width direction of the effective area in the peripheral area, a total pitch mark corresponding to the first total pitch mark is represented as a second total pitch mark;

a distance along the width direction between the first total pitch mark and the second total pitch mark is represented as D1 (mm) when the deposition mask is placed on a horizontal flat surface such that the first surface faces upward; and

a distance along the width direction between the first total pitch mark and the second total pitch mark is represented as D2 (mm) when the deposition mask is placed on a horizontal flat surface such that the first surface faces upward and the deposition mask is loaded from above so that the deposition mask is flattened.

3. The deposition mask according to claim 1, wherein:

a value of a difference (D2−

D1) between the distance D2 and the distance D1 is larger than 0 mm and smaller than 0.05 mm, in which

out of the one or more through holes located closest to an edge on one side of the width direction of the deposition mask, a through hole closest to the central portion of the longitudinal direction is represented as a first through hole;

out of the one or more through holes located closest to an edge on the other side of the width direction of the deposition mask, a through hole whose separation distance to the first through hole along the longitudinal direction is shortest is represented as a second through hole;

a distance along the width direction between the first through hole and the second through hole is represented as D1 (mm) when the deposition mask is placed on a horizontal flat surface such that the first surface faces upward; and

a distance along the width direction between the first through hole and the second through hole is represented as D2 (mm) when the deposition mask is placed on a horizontal flat surface such that the first surface faces upward and the deposition mask is loaded from above so that the deposition mask is flattened.