THERMAL PILE SENSING STRUCTURE INTEGRATED WITH CAPACITOR
First Claim
1. A thermal pile sensing structure, comprising:
- a substrate, having a surface plane (X-Y plane) and a normal direction (Z-direction) which is perpendicular to the surface plane;
an infrared sensing unit located above the substrate; and
a partition structure, which extends in the Z-direction and around the infrared sensing unit;
wherein at least one hot junction and at least one cold junction are parts of the infrared sensing unit and/or the partition structure;
wherein a temperature difference between the hot junction and the cold junction generates a voltage difference signal and a part of the partition structure has at least one capacitor having an upper electrode and a lower electrode, wherein the upper electrode is located at a higher level than the lower electrode in the Z-direction.
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Abstract
The present invention discloses a thermal pile sensing structure integrated with one or more capacitors, which includes: a substrate, an infrared sensing unit and a partition structure. The infrared sensing unit includes a first and a second sensing structure. A hot junction is formed between the first and the second sensing structures at a location where the first and the second sensing structures are close to each other. A cold junction is formed between the partition structure and the first sensing structure at a location where these two structures are close to each other. Another cold junction is formed between the partition structure and the second sensing structure at a location where these two structures are close to each other. A temperature difference between the hot junction and the cold junction generates a voltage difference signal. Apart of the partition structure forms at least one capacitor.
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Citations
7 Claims
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1. A thermal pile sensing structure, comprising:
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a substrate, having a surface plane (X-Y plane) and a normal direction (Z-direction) which is perpendicular to the surface plane; an infrared sensing unit located above the substrate; and a partition structure, which extends in the Z-direction and around the infrared sensing unit; wherein at least one hot junction and at least one cold junction are parts of the infrared sensing unit and/or the partition structure; wherein a temperature difference between the hot junction and the cold junction generates a voltage difference signal and a part of the partition structure has at least one capacitor having an upper electrode and a lower electrode, wherein the upper electrode is located at a higher level than the lower electrode in the Z-direction. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification