THIN FILM TRANSISTOR, SENSOR, BIOLOGICAL DETECTION DEVICE AND METHOD
First Claim
1. A thin film transistor, comprising:
- a substrate;
a first gate on the substrate;
a first dielectric layer on the substrate and the first gate, wherein an orthographic projection of the first gate on the substrate is within an orthographic projection of the first dielectric layer on the substrate;
a source, a drain, and a semiconductor layer on a side of the first dielectric layer facing away from the first gate, the source and the drain being respectively connected to the semiconductor layer, both an orthographic projection of the source on the substrate and an orthographic projection of the drain on the substrate being within an orthographic projection of the semiconductor layer on the substrate;
a second dielectric layer on the first dielectric layer and the semiconductor layer, a material of the second dielectric layer being a solid state electrolyte material, wherein the orthographic projection of the semiconductor layer on the substrate is within an orthographic projection of the second dielectric layer on the substrate; and
a second gate on a side of the second dielectric layer facing away from the semiconductor layer.
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Abstract
The present disclosure provides a thin film transistor, a sensor, a biological detection device and a method. The thin film transistor includes a substrate, a first gate, a first dielectric layer, a source, a drain, a semiconductor layer, a second dielectric layer, and a second gate. The first gate is on the substrate. The first dielectric layer is on the substrate and the first gate. The source, the drain, and the semiconductor layer are on a side of the first dielectric layer facing away from the first gate. The second dielectric layer is on the first dielectric layer and the semiconductor layer. A material of the second dielectric layer is a solid state electrolyte material. The second gate is on a side of the second dielectric layer facing away from the semiconductor layer.
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Citations
19 Claims
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1. A thin film transistor, comprising:
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a substrate; a first gate on the substrate; a first dielectric layer on the substrate and the first gate, wherein an orthographic projection of the first gate on the substrate is within an orthographic projection of the first dielectric layer on the substrate; a source, a drain, and a semiconductor layer on a side of the first dielectric layer facing away from the first gate, the source and the drain being respectively connected to the semiconductor layer, both an orthographic projection of the source on the substrate and an orthographic projection of the drain on the substrate being within an orthographic projection of the semiconductor layer on the substrate; a second dielectric layer on the first dielectric layer and the semiconductor layer, a material of the second dielectric layer being a solid state electrolyte material, wherein the orthographic projection of the semiconductor layer on the substrate is within an orthographic projection of the second dielectric layer on the substrate; and a second gate on a side of the second dielectric layer facing away from the semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method of manufacturing a thin film transistor, comprising:
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forming a first gate on a substrate; forming a first dielectric layer on the substrate and the first gate, wherein an orthographic projection of the first gate on the substrate is within an orthographic projection of the first dielectric layer on the substrate; forming a source, a drain, and a semiconductor layer on a side of the first dielectric layer facing away from the first gate, the source and the drain being respectively connected to the semiconductor layer, both an orthographic projection of the source on the substrate and an orthographic projection of the drain on the substrate being within an orthographic projection of the semiconductor layer on the substrate; forming a second dielectric layer on the first dielectric layer and the semiconductor layer, a material of the second dielectric layer being a solid state electrolyte material, wherein the orthographic projection of the semiconductor layer on the substrate is within an orthographic projection of the second dielectric layer on the substrate; and forming a second gate on a side of the second dielectric layer facing away from the semiconductor layer. - View Dependent Claims (13, 14, 15, 16)
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17. A method of detecting a sample using a thin film transistor, wherein the thin film transistor comprises:
- a substrate;
a first gate on the substrate;
a first dielectric layer on the substrate and the first gate;
a source, a drain, and a semiconductor layer on a side of the first dielectric layer facing away from the first gate, the source and the drain being respectively connected to the semiconductor layer;
a second dielectric layer on the first dielectric layer and the semiconductor layer, a material of the second dielectric layer being a solid state electrolyte material;
a second gate on a side of the second dielectric layer facing away from the semiconductor layer;
a first port layer above the substrate, the first port layer being spaced apart from the first gate; and
a second port layer connected to the second gate, the second port layer being isolated from the first port layer by the first dielectric layer;the method comprising; applying an adjustment voltage to the first gate such that the thin film transistor is in a sensitive working range; connecting the first port layer and the second port layer to a sample to be detected, respectively; applying a detection voltage to the first port layer; and obtaining an output current from the source or the drain, and obtaining a detection result of the sample according to the output current. - View Dependent Claims (18, 19)
- a substrate;
Specification