×

Method for Extreme Ultraviolet Lithography Mask Treatment

  • US 20190324364A1
  • Filed: 04/18/2018
  • Published: 10/24/2019
  • Est. Priority Date: 04/18/2018
  • Status: Active Grant
First Claim
Patent Images

1. A method, comprising:

  • receiving a workpiece that includes a substrate having a low temperature expansion material, a reflective multilayer over the substrate, a capping layer over the reflective multilayer, and an absorber layer over the capping layer;

    first patterning the absorber layer to provide first trenches corresponding to circuit patterns on a wafer;

    second patterning the absorber layer, the capping layer, and the reflective multilayer to provide second trenches corresponding to a die boundary area on the wafer, thereby providing an extreme ultraviolet lithography (EUVL) mask; and

    treating the EUVL mask with one or more chemical elements that prevent exposed surfaces of the absorber layer from oxidation.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×