METHOD OF FABRICATING A SEMICONDUCTOR DEVICE
First Claim
1. A method, comprising:
- designing a first layout including gate structures and diffusion regions of a plurality of active devices;
identifying an edge device of the plurality of active devices;
modifying the first layout resulting in a second layout comprising;
adding a dummy device next to the edge device, the dummy device and the edge device having a shared diffusion region;
adding a dummy gate structure next to the dummy device; and
extending the shared diffusion region to at least the dummy device;
performing a design rule check on the second layout, the performing the design rule check considers a gate structure of the dummy device as one of two dummy gate structures next to the edge device; and
fabricating, based on the second layout, at least one of a photolithography mask or at least one component in a layer of a semiconductor device.
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Accused Products
Abstract
A method includes designing a first layout of gate structures and diffusion regions of a plurality of active devices, identifying an edge device of the plurality of active devices, modifying the first layout resulting in a second layout, performing a design rule check on the second layout, and fabricating, based on the second layout, at least one of a photolithography mask or at least one component in a layer of a semiconductor device. Modifying the first layout includes adding a dummy device next to the edge device, adding a dummy gate structure next to the dummy device and extending a shared diffusion region to at least the dummy device. The dummy device and the edge device have the shared diffusion region. Performing the design rule check considers a gate structure of the dummy device as one of two dummy gate structures next to the edge device.
7 Citations
20 Claims
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1. A method, comprising:
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designing a first layout including gate structures and diffusion regions of a plurality of active devices; identifying an edge device of the plurality of active devices; modifying the first layout resulting in a second layout comprising; adding a dummy device next to the edge device, the dummy device and the edge device having a shared diffusion region; adding a dummy gate structure next to the dummy device; and extending the shared diffusion region to at least the dummy device; performing a design rule check on the second layout, the performing the design rule check considers a gate structure of the dummy device as one of two dummy gate structures next to the edge device; and fabricating, based on the second layout, at least one of a photolithography mask or at least one component in a layer of a semiconductor device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method, comprising:
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designing a first layout including gate structures and diffusion regions of a semiconductor device; identifying neighboring gate structures having different gate lengths, the neighboring gate structures including a first gate structure having a first gate length and a second gate structure having a second gate length different from the first gate length; modifying the first layout resulting in a second layout comprising; inserting a dummy device between the first gate structure and the second gate structure; and extending a first diffusion region of the first gate structure to the dummy device, the first diffusion region being shared by the dummy device and the first gate structure; performing a design rule check on the second layout, the performing the design rule check comprises considering the sharing of the first diffusion region by the dummy device and the first gate structure as complying with a design rule of the design rule check; and fabricating, based on the second layout, at least one of a photolithography mask or at least one component in a layer of the semiconductor device. - View Dependent Claims (11, 13, 14, 15, 16, 19)
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12. The method of claim 12, wherein performing the design rule check on the second layout further comprises:
considering the sharing of the second diffusion region by the dummy device and the second gate structure as complying with the design rule of the design rule check.
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17. A method, comprising:
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designing a first layout of gate structures and diffusion regions for a semiconductor device; identifying a first device having a first gate structure and an irregular diffusion region adjacent to a second device having a second gate structure and a diffusion region different from the irregular diffusion region; inserting a dummy device between the first gate structure and the second gate structure resulting in a second layout, wherein a first diffusion region is shared by the dummy device and the first gate structure, a second diffusion region is shared by the dummy device and the second gate structure, the first diffusion region or the second diffusion region has a rectangular shape, and the irregular diffusion region has a non-rectangular shape; performing a design rule check on the second layout, the performing the design rule check comprises considering the sharing of the first diffusion region by the dummy device and the first gate structure or the sharing of the second diffusion region by the dummy device and the second gate structure as complying with a design rule of the design rule check; and fabricating, based on the second layout, at least one of a photolithography mask or at least one component in a layer of the semiconductor device. - View Dependent Claims (18, 20)
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Specification