MAGNETOELECTRIC SPIN ORBIT LOGIC WITH PARAMAGNETS

• US 20190325932A1
• Filed: 12/23/2016
• Published: 10/24/2019
• Est. Priority Date: 12/23/2016
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Manipatruni, Sasikanth, Nikonov, Dmitri E., Young, Ian A.
• Granted Patent: US 11,114,144 B2
• Time in Patent Office: Days
• CPC Class Codes: G11C 11/161 details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
• CPC Class Codes: H03K 19/18 using galvano-magnetic devices, e.g. Hall-effect devices
• CPC Class Codes: H03K 19/20 characterised by logic function, e.g. AND, OR, NOR, NOT circuits H03K19/003 - H03K19/01 take precedence
• CPC Class Codes: H03K 19/23 Majority or minority circuits, i.e. giving output having the state of the majority or the minority of the inputs
• CPC Class Codes: H10B 61/22 of the field-effect transistor [FET] type
• CPC Class Codes: H10N 50/00 Galvanomagnetic devices Hall-effect devices H10N52/00; integrated devices or assemblies of multiple devices H10N59/00
• CPC Class Codes: H10N 50/85 Magnetic active materials
• CPC Class Codes: H10N 52/01 Manufacture or treatment
• CPC Class Codes: H10N 52/101 Semiconductor Hall-effect devices
• CPC Class Codes: H10N 52/80 Constructional details
• CPC Class Codes: H10N 59/00 Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 MRAM devices H10B61/00

Abstract

An apparatus is provided which comprises: a first paramagnet; a stack of layers, a portion of which is adjacent to the first paramagnet, wherein the stack of layers is to provide an inverse Rashba-Edelstein effect; a second paramagnet; a magnetoelectric layer adjacent to the second paramagnet; and a conductor coupled to at least a portion of the stack of layers and the magnetoelectric layer.

Claims

1-25. -25. (canceled)

26. An apparatus comprising:

a first paramagnet;

a stack of layers, a portion of which is adjacent to the first paramagnet, wherein the stack of layers is to provide an inverse spin-orbit coupling effect;

a second paramagnet;

a layer adjacent to the second paramagnet, wherein the layer comprises magnetoelectric material; and

a conductor coupled to at least a portion of the stack of layers and the layer.

27. The apparatus of claim 26, wherein the first and second paramagnets comprises a material which includes one or more of:

Pt, Pd, W, Ce, Al, Li, Mg, Na, Cr, Co, Dy, Er, Eu, Gd, Fe, Nd, K, Pr, Sm, Tb, Tm, or V.

28. The apparatus of claim 27, wherein the stack of layers comprises:

a first layer comprising Ag, wherein the first layer is adjacent to the first paramagnet; and

a second layer comprising Bi, wherein the second layer is adjacent to the first layer and to the conductor.

29. The apparatus of claim 27, wherein the stack of layers comprises:

a first layer comprising Ag, wherein the first layer is adjacent to the first paramagnet; and

a second layer comprising W, wherein the second layer is adjacent to the first layer and to the conductor.

30. The apparatus of claim 26, wherein the conductor comprises a material which includes one or more of:

Cu, Ag, Al, or Au.

31. The apparatus of claim 26, wherein the magnetoelectric material includes one of:

Cr or multiferroic material.

32. The apparatus of claim 31, wherein the multiferroic material comprises:

Bi and Fe.

33. The apparatus of claim 26, wherein the stack of layers comprises a material which comprises one or more of:

β

-Ta, β

-W, W, Pt, Cu doped with Iridium, Cu doped with Bismuth, or Cu doped an element of 3d, 4d, 5d, 4f, or 5f of periodic table groups.

34. The apparatus of claim 26 comprises a transistor coupled to the first paramagnet.

35. The apparatus of claim 26, wherein a portion of the stack of the layers is coupled to ground, wherein the first paramagnet is coupled to a negative supply, and wherein the second paramagnet is coupled to ground.

36. The apparatus of claim 26, wherein a portion of the stack of the layers is coupled to ground, wherein the first paramagnet is coupled to a positive supply, and wherein the second paramagnet is coupled to ground.

37. The apparatus of claim 26, wherein the first and second paramagnets have in-plane magnetic anisotropy.

38. An apparatus comprising:

a first paramagnet having a first portion and a second portion;

a first stack of layers, a portion of which is adjacent to the first portion of the first paramagnet, wherein the first stack of layers is to provide an inverse spin orbit effect;

a first layer adjacent to the second portion of first paramagnet, wherein the first layer comprises magnetoelectric material;

a first conductor adjacent to the first layer;

a second conductor adjacent to at least a portion of the first stack of layers

a second paramagnet having a first portion and a second portion;

a second stack of layers adjacent to the first portion of the second paramagnet, wherein the second stack of layers is to provide an inverse spin orbit effect;

a second layer adjacent to the second portion of the second paramagnet, wherein the second layer comprises magnetoelectric material;

a second conductor adjacent to the second layer;

a third conductor adjacent to at least a portion of the second stack of layers;

a third paramagnet having a first portion and a second portion;

a third stack of layers, a portion of which is adjacent to the first portion of the third paramagnet, wherein the third stack of layers is to provide an inverse spin-orbit coupling effect;

a third layer adjacent to the second portion of the third paramagnet, wherein the third layer comprises magnetoelectric material;

a third conductor adjacent to the third layer;

a fourth conductor adjacent to at least a portion of the third stack of layers; and

a fifth conductor coupled to the second, third, and fourth conductors.

39. The apparatus of claim 38 comprises:

a fourth paramagnet having a first portion and a second portion;

a fourth stack of layers, a portion of which is adjacent to the first portion of the fourth paramagnet, wherein the fourth stack of layers is to provide an inverse spin-orbit coupling effect;

a sixth conductor adjacent to at least a portion of the fourth stack of layers; and

a fourth layer adjacent to the second portion of the fourth paramagnet, wherein the fourth layer comprises magnetoelectric material, and wherein the fourth layer is adjacent to the fifth conductor.

40. The apparatus of claim 39, wherein the first, second, third, and fourth paramagnets comprise a material which includes one or more of:

Platinum, Palladium, Tungsten, Cesium, Aluminum, Lithium, Magnesium, or Sodium.

41. The apparatus of claim 39, wherein the first, second, third, and fourth paramagnets comprises dopants which comprises one or more of:

Cr, Mn, Nb, Mo, Tc, Re, Nd, Gd, Tb, Dy, Ho, Er, Tm, or Yb.

42. The apparatus of claim 39, wherein the magnetoelectric material includes one or more of:

Cr or multiferroic material, and wherein the multiferroic material comprises Bi and Fe.

44. The apparatus of claim 39, wherein the first, second, third, and fourth stack of layers comprises a material which includes one or more of:

β

-Ta, β

-W, W, Pt, Cu doped with Iridium, Cu doped with Bismuth, or Cu doped an element of 3d, 4d, 5d, 4f, or 5f of periodic table groups.

45. A system comprising:

a memory;

a processor coupled to the memory, the processor including an apparatus which comprises;

a first paramagnet;

a stack of layers, a portion of which is adjacent to the first paramagnet, wherein the stack of layers is to provide an inverse spin-orbit coupling effect;

a second paramagnet;

a layer adjacent to the second paramagnet, wherein the layer comprises magnetoelectric material; and

a conductor coupled to at least a portion of the stack of layers and the layer; and

a wireless interface to allow the processor to communicate with another device.

46. The apparatus of claim 45, wherein the first and second paramagnets comprises a material which includes one or more of:

Pt, Pd, W, Ce, Al, Li, Mg, Na, Cr, Co, Dy, Er, Eu, Gd, Fe, Nd, K, Pr, Sm, Tb, Tm, or V.