×

SIBN FILM FOR CONFORMAL HERMETIC DIELECTRIC ENCAPSULATION WITHOUT DIRECT RF EXPOSURE TO UNDERLYING STRUCTURE MATERIAL

  • US 20190326110A1
  • Filed: 11/16/2017
  • Published: 10/24/2019
  • Est. Priority Date: 12/22/2016
  • Status: Active Grant
First Claim
Patent Images

1. A method, comprising:

  • thermally depositing a first material over a memory material by flowing one or more first precursors over the memory material at a temperature less than a thermal budget of the memory material;

    exposing the first material to a nitrogen plasma to incorporate nitrogen in the first material; and

    repeating the thermally depositing the first material and the exposing the first material to the nitrogen plasma to form a dielectric encapsulation layer having a predetermined thickness over the memory material.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×