PRE-CLEAN OF SILICON GERMANIUM FOR PRE-METAL CONTACT AT SOURCE AND DRAIN AND PRE-HIGH K AT CHANNEL
First Claim
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1. A method for processing a substrate, comprising:
- exposing a surface of the substrate to hydrogen radical species;
exposing the surface of the substrate to a plasma formed from a first fluorine-containing precursor and a first hydrogen-containing precursor;
annealing the substrate; and
forming an epitaxial layer on the surface of the substrate.
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Abstract
The present disclosure generally relates to methods for removing contaminants and native oxides from substrate surfaces. The method includes exposing a surface of the substrate to first hydrogen radical species, wherein the substrate is silicon germanium having a concentration of germanium above about 30%, then exposing the surface of the substrate to a plasma formed from a fluorine-containing precursor and a hydrogen-containing precursor, and then exposing the surface of the substrate to second hydrogen radical species.
7 Citations
20 Claims
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1. A method for processing a substrate, comprising:
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exposing a surface of the substrate to hydrogen radical species; exposing the surface of the substrate to a plasma formed from a first fluorine-containing precursor and a first hydrogen-containing precursor; annealing the substrate; and forming an epitaxial layer on the surface of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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14. A method for processing a substrate, comprising:
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exposing a surface of the substrate to a plasma formed from a first fluorine-containing precursor and a first hydrogen-containing precursor; exposing the surface of the substrate to hydrogen radical species; exposing the surface of the substrate to a plasma formed from a second fluorine-containing precursor and a second hydrogen-containing precursor; and
thenforming an epitaxial layer on the surface of the substrate. - View Dependent Claims (15, 16, 17, 18)
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19. A method for processing a substrate, comprising:
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exposing a surface of the substrate to hydrogen radical species; subjecting the surface of the substrate to a bake process in a hydrogen-containing environment; and
thenforming an epitaxial layer on the surface of the substrate. - View Dependent Claims (20)
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Specification