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PRE-CLEAN OF SILICON GERMANIUM FOR PRE-METAL CONTACT AT SOURCE AND DRAIN AND PRE-HIGH K AT CHANNEL

  • US 20190326115A1
  • Filed: 12/26/2018
  • Published: 10/24/2019
  • Est. Priority Date: 09/15/2014
  • Status: Active Grant
First Claim
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1. A method for processing a substrate, comprising:

  • exposing a surface of the substrate to hydrogen radical species;

    exposing the surface of the substrate to a plasma formed from a first fluorine-containing precursor and a first hydrogen-containing precursor;

    annealing the substrate; and

    forming an epitaxial layer on the surface of the substrate.

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