TUNING WORK FUNCTION OF P-METAL WORK FUNCTION FILMS THROUGH VAPOR DEPOSITION
First Claim
1. A method for forming a p-metal work function nitride film having a desired p-work function on a substrate, comprising:
- adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, andcontacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.
1 Assignment
0 Petitions
Accused Products
Abstract
The present disclosure relates to a method for forming a p-metal work function nitride film having a desired p-work function on a substrate, including: adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.
3 Citations
20 Claims
-
1. A method for forming a p-metal work function nitride film having a desired p-work function on a substrate, comprising:
-
adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
-
-
17. A method for forming one or more p-metal work function films over a substrate in a reaction to have a desired p-work function comprising:
-
adjusting one or more process parameters of a reaction to tune a work function of one or more p-metal work function nitride films to a desired p-work function; and alternately and sequentially contacting the substrate with temporally separated vapor phase pulses of one or more metal source chemicals, and one or more reactive gases to form one or more p-metal work function nitride films having a desired work function. - View Dependent Claims (18, 19)
-
-
20. A non-transitory computer readable medium having instructions stored thereon that, when executed, cause a method of forming a p-metal work function nitride film having a desired p-work function on a substrate in a process chamber, comprising:
- adjusting one or more of a temperature of a substrate, a duration of one or more temporally separated vapor phase pulses, a ratio of a tungsten precursor to a titanium precursor, or a pressure of a reaction to tune a work function of a p-metal work function nitride film to a desired p-work function, and contacting the substrate with temporally separated vapor phase pulses of the tungsten precursor, the titanium precursor, and a reactive gas to form a p-metal work function nitride film thereon having the desired p-work function.
Specification