MANUFACTURING METHOD OF HIGH-DIELECTRIC-CONSTANT GATE INSULATING FILM OF SEMICONDUCTOR DEVICE

• US 20190326121A1
• Filed: 07/01/2019
• Published: 10/24/2019
• Est. Priority Date: 07/06/2016
• Status: Active Grant

• Current Assignee: SCREEN Holdings Co., Ltd.
• Original Assignee: SCREEN Holdings Co., Ltd.
• Inventors: AOYAMA, Takayuki
• Granted Patent: US 10,886,132 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/28088 the final conductor layer next to the insulator being a composite, e.g. TiN
• CPC Class Codes: H01L 21/28176 with a treatment, e.g. annealing, after the formation of the definitive gate conductor
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67748 horizontal transfer of a single workpiece
• CPC Class Codes: H01L 21/68721 characterised by edge clamping, e.g. clamping ring
• CPC Class Codes: H01L 29/513 the variation being perpendicular to the channel plane
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/78 with field effect produced by an insulated gate H01L29/7725, H01L29/775, H01L29/778 take precedence

Abstract

A semiconductor wafer serving as a treatment target has a stack structure in which a high-dielectric-constant gate insulating film is formed on a silicon base material with an interface layer film of silicon dioxide sandwiched therebetween, and a metal gate electrode containing fluorine is further formed thereon. A heat treatment apparatus radiates flash light from a flash lamp to the semiconductor wafer in an atmosphere containing hydrogen to carry out heating treatment for an extremely short period of time of 100 milliseconds or less. As a result, diffusion of nitrogen contained in the metal gate electrode is inhibited, at the same time, only the fluorine is diffused from the high-dielectric-constant gate insulating film to an interface between the interface layer film and the silicon base material to reduce an interface state, and reliability of the gate stack structure can be improved.

Claims

1. A manufacturing method of a semiconductor device of forming a high-dielectric-constant gate insulating film on a silicon substrate with an interface layer film sandwiched therebetween, the manufacturing method comprising following steps of:

(a) forming the high-dielectric-constant gate insulating film on a surface of said substrate with the interface layer film of silicon dioxide sandwiched therebetween;

(b) forming a metal gate electrode containing fluorine on said high-dielectric-constant gate insulating film; and

(c) subjecting said substrate to heating treatment of 100 milliseconds or less in a gas atmosphere of one selected from a group consisting of hydrogen, ammonia, nitrogen trifluoride, and fluorine to diffuse the fluorine to said high-dielectric-constant gate insulating film and said interface layer film.

2. The manufacturing method of the semiconductor device according to claim 1, wherein

said metal gate electrode contains TiN, TaN, or AlN.

3. The manufacturing method of the semiconductor device according to claim 1, wherein

a content of the fluorine contained in said metal gate electrode is 0.1 at %/o or more to 10 at % or less.

4. The manufacturing method of the semiconductor device according to claim 1, wherein,

in said step (c), flash light is radiated from a flash lamp to the surface of said substrate.