Structure and Method for Embedded Gettering in a Silicon On Insulator Wafer
First Claim
1. A method of manufacturing a silicon-on-insulator (SOI) substrate, the method comprising:
- forming an epitaxial layer over a first substrate;
depositing a gettering layer over the epitaxial layer;
bonding a second substrate to the gettering layer, wherein the second substrate comprises an insulating layer, and the insulating layer adjoins the gettering layer after bonding the second substrate; and
removing the first substrate.
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Abstract
A representative method of manufacturing a silicon-on-insulator (SOI) substrate includes steps of depositing an etch stop layer on a dummy wafer, growing an epitaxial silicon layer on the etch stop layer, forming a gettering layer on the epitaxial silicon layer, bonding a buried oxide layer of a main wafer to the gettering layer, and removing the dummy wafer and etch stop layer to expose the epitaxial silicon layer. The SOI substrate has an epitaxial silicon layer adjoining the gettering layer, with the gettering layer interposed between the buried oxide layer and the epitaxial silicon layer.
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Citations
20 Claims
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1. A method of manufacturing a silicon-on-insulator (SOI) substrate, the method comprising:
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forming an epitaxial layer over a first substrate; depositing a gettering layer over the epitaxial layer; bonding a second substrate to the gettering layer, wherein the second substrate comprises an insulating layer, and the insulating layer adjoins the gettering layer after bonding the second substrate; and removing the first substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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8. A method of manufacturing a silicon-on-insulator (SOI) substrate, the method comprising:
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depositing an etch stop layer over a dummy wafer; growing an epitaxial silicon layer over the etch stop layer; forming a gettering layer over the epitaxial silicon layer; bonding an oxide layer of a main wafer to an oxidized portion of the gettering layer; after bonding the oxide layer of the main wafer, removing the dummy wafer; and after removing the dummy wafer, removing the etch stop layer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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15. A semiconductor device comprising:
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a silicon substrate; a buried oxide layer; a gettering layer adjoining the buried oxide layer; and an epitaxial silicon layer adjoining the gettering layer, wherein the gettering layer is interposed between the buried oxide layer and the epitaxial silicon layer. - View Dependent Claims (16, 17, 18, 19, 20)
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Specification