WAFER BOAT AND METHOD OF MANUFACTURING THE SAME

• US 20190326145A1
• Filed: 01/31/2019
• Published: 10/24/2019
• Est. Priority Date: 04/19/2018
• Status: Abandoned Application

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: YOSHIDA, Atsushi
• Application Number:
  US16/263,243
• Publication Number:
  US 20190326145A1
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/67306 characterized by a material, a roughness, a coating or the like
• CPC Class Codes: H01L 21/67309 characterized by the substrate support
• CPC Class Codes: H01L 21/67757 vertical transfer of a batch of workpieces
• CPC Class Codes: H01L 29/1608 Silicon carbide

Abstract

Provided is a wafer boat having a plurality of SiC wafers mounted on the water boat so that main surfaces of the plurality of the SiC wafers vertically face each other. The wafer boat includes a wafer support member in which a plurality of wafer shelves supporting the plurality of the SiC wafers are provided along an arrangement direction of the plurality of the SiC wafers, and a surface roughness of at least the wafer support member is equal to or larger than 2 μm and equal to or smaller than 4 μm at Ra value.

Claims

1. A wafer boat having a plurality of SiC wafers mounted on the wafer boat so that main surfaces of the plurality of the SiC wafers vertically face each other, wherein

the wafer boat includes a wafer support member in which a plurality of wafer shelves supporting the plurality of the SiC wafers are provided along an arrangement direction of the plurality of the SiC wafers, and

a surface roughness of at least the wafer support member is equal to or larger than 2 μ

m and equal to or smaller than 4 μ

m at Ra value.

2. The wafer boat according to claim 1, wherein

the wafer boat is made of quartz.

3. A method of manufacturing the wafer boat according to claim 1, comprising:

preparing an untreated wafer boat whose surface roughness is approximately 0.5 to 1 μ

m at Ra value; and

wholly immersing the untreated wafer boat in dilute hydrofluoric acid having a concentration of 5 to 20 % or royal water.