FINFET GATE STRUCTURE AND METHOD FOR FABRICATING THE SAME
First Claim
1. A method for forming a semiconductor device, the method comprising:
- forming a first pair of gate spacers;
forming a high-k dielectric layer in an opening defined between a first gate spacer of the first pair of gate spacers and a second gate spacer of the first pair of gate spacers;
forming a plurality of metal layers over the high-k dielectric layer; and
forming a metal filler over the plurality of metal layers using a fluorine-based precursor, wherein fluorine from the fluorine-based precursor diffuses into at least one metal layer of the plurality of metal layers.
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Abstract
A semiconductor device includes a n-type gate structure over a first semiconductor fin, in which the n-type gate structure is fluorine incorporated and includes a n-type work function metal layer overlying the first high-k dielectric layer. The n-type work function metal layer includes a TiAl (titanium aluminum) alloy, in which an atom ratio of Ti (titanium) to Al (aluminum) is in a range substantially from 1 to 3. The semiconductor device further includes a p-type gate structure over a second semiconductor fin, in which the p-type gate structure is fluorine incorporated includes a p-type work function metal layer overlying the second high-k dielectric layer. The p-type work function metal layer includes titanium nitride (TiN), in which an atom ratio of Ti to N (nitrogen) is in a range substantially from 1:0.9 to 1:1.1.
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Citations
20 Claims
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1. A method for forming a semiconductor device, the method comprising:
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forming a first pair of gate spacers; forming a high-k dielectric layer in an opening defined between a first gate spacer of the first pair of gate spacers and a second gate spacer of the first pair of gate spacers; forming a plurality of metal layers over the high-k dielectric layer; and forming a metal filler over the plurality of metal layers using a fluorine-based precursor, wherein fluorine from the fluorine-based precursor diffuses into at least one metal layer of the plurality of metal layers. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A method for forming a semiconductor device, the method comprising:
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forming a first pair of gate spacers; forming a plurality of metal layers in an opening defined between a first gate spacer of the first pair of gate spacers and a second gate spacer of the first pair of gate spacers, wherein the plurality of metal layers define a stacked structure; and forming a metal filler over the stacked structure using a fluorine-based precursor, wherein; the stacked structure has a first fluorine concentration prior to forming the metal filler, the stacked structure has a second fluorine concentration after forming the metal filler, and the second fluorine concentration is greater than the first fluorine concentration. - View Dependent Claims (13, 14, 15, 16, 17)
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18. A method for forming a semiconductor device, the method comprising:
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forming a first pair of gate spacers; forming a high-k dielectric layer in an opening defined between a first gate spacer of the first pair of gate spacers and a second gate spacer of the first pair of gate spacers; forming a plurality of metal layers over the high-k dielectric layer; and diffusing fluorine into at least one metal layer of the plurality of metal layers. - View Dependent Claims (19, 20)
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Specification