SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate having a front surface and a rear surface facing each other;
a gate wiring provided on the front surface of the semiconductor substrate;
first and second front surface electrodes provided on the front surface of the semiconductor substrate and separated from each other by the gate wiring;
an insulating film covering the gate wiring;
an electrode layer provided on the insulating film and the first and second front surface electrodes across the gate wiring;
a rear surface electrode provided on the rear surface of the semiconductor substrate;
a first plated electrode provided on the electrode layer; and
a second plated electrode provided on the rear surface electrode.
1 Assignment
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Accused Products
Abstract
A semiconductor substrate (1) has a front surface and a rear surface facing each other. A gate wiring (2) and first and second front surface electrodes (3,4) are provided on the front surface of the semiconductor substrate (1). The first and second front surface electrodes (3,4) are separated from each other by the gate wiring (2). An insulating film (7) covers the gate wiring (2). An electrode layer (8) is provided on the insulating film (7) and the first and second front surface electrodes (3,4) across the gate wiring (2). A rear surface electrode (9) is provided on the rear surface of the semiconductor substrate (1). A first plated electrode (10) is provided on the electrode layer (8). A second plated electrode (11) is provided on the rear surface electrode (9).
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Citations
21 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate having a front surface and a rear surface facing each other; a gate wiring provided on the front surface of the semiconductor substrate; first and second front surface electrodes provided on the front surface of the semiconductor substrate and separated from each other by the gate wiring; an insulating film covering the gate wiring; an electrode layer provided on the insulating film and the first and second front surface electrodes across the gate wiring; a rear surface electrode provided on the rear surface of the semiconductor substrate; a first plated electrode provided on the electrode layer; and a second plated electrode provided on the rear surface electrode. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20)
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21-25. -25. (canceled)
Specification