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Semiconductor Device Having a Bidirectional Switch and Discharge Circuit

  • US 20190326280A1
  • Filed: 04/23/2018
  • Published: 10/24/2019
  • Est. Priority Date: 04/23/2018
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a main bi-directional switch formed on a semiconductor substrate and comprising first and second gates, a first source electrically connected to a first voltage terminal, a second source electrically connected to a second voltage terminal, and a common drain; and

    a discharge circuit comprising a plurality of individual transistors or an auxiliary bi-directional switch monolithically integrated with the main bi-directional switch and connected in a common source configuration to the semiconductor substrate, the plurality of individual transistors or the auxiliary bi-directional switch comprising a first drain connected to the first source of the main bi-directional switch, a second drain connected to the second source of the main bi-directional switch, and first and second gates each decoupled from gate drive circuitry so that the first and the second gates are controlled at least passively and based on a state of the main bi-directional switch.

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