METAL GATE STRUCTURE AND METHODS THEREOF

• US 20190326282A1
• Filed: 05/06/2019
• Published: 10/24/2019
• Est. Priority Date: 07/31/2017
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: HUANG, Ming-Chi, CHUANG, Ying-Liang, YEH, Ming-Hsi, HUANG, Kuo-Bin
• Granted Patent: US 10,748,898 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 21/32135 by vapour etching only
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: H01L 21/823431 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 21/823437 with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
• CPC Class Codes: H01L 21/823821 with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 21/823828 with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
• CPC Class Codes: H01L 21/823878 isolation region manufacturing related aspects, e.g. to avoid interaction of isolation region with adjacent structure
• CPC Class Codes: H01L 27/0886 including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 27/0924 including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
• CPC Class Codes: H01L 29/0649 Dielectric regions, e.g. SiO2 regions, air gaps
• CPC Class Codes: H01L 29/42376 characterised by the length or the sectional shape
• CPC Class Codes: H01L 29/4966 the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 H01L29/4908, H01L29/4983 take precedence
• CPC Class Codes: H01L 29/4975 being a silicide layer, e.g. TiSi2
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate

Abstract

Provided is a metal gate structure and related methods that include performing a metal gate cut process. The metal gate cut process includes a plurality of etching steps. For example, a first anisotropic dry etch is performed, a second isotropic dry etch is performed, and a third wet etch is performed. In some embodiments, the second isotropic etch removes a residual portion of a metal gate layer including a metal containing layer. In some embodiments, the third etch removes a residual portion of a dielectric layer.

Claims

1. A semiconductor device, comprising:

a first fin and a second fin extending from a substrate, the first fin having a first gate region and the second fin having a second gate region and a shallow trench isolation (STI) structure interposing the first and second fins;

a first portion of a metal gate structure disposed over the first gate region and a second portion of the metal gate structure disposed over the second gate region, wherein the first and second portions are separated by a cut gate region; and

a dielectric layer disposed in the cut gate region, wherein the dielectric layer extends below a top surface of the STI structure;

wherein the first portion of the metal gate structure has a first face abutting the cut gate region, wherein the first face has a first width adjacent the top surface of the STI structure and a second width above the first width, the second width less than the first width.

2. The semiconductor device of claim 1, wherein the first and second portions are collinear.

3. The semiconductor device of claim 1, the cut gate region includes a first dielectric material having the first width adjacent the STI structure and the second width above the first width.

4. The semiconductor device of claim 1, wherein the first face of the first portion of the metal gate structure has a tapered profile from the second width to the first width.

5. The semiconductor device of claim 1, wherein the STI structure extends from interfacing the first fin to interfacing the second fin.

6. The semiconductor device of claim 1, wherein the dielectric layer extends to the substrate underlying the STI structure.

7. The semiconductor device of claim 1, wherein the dielectric layer in the cut gate region includes a third width at a region interfacing the top surface of the STI structure and a fourth width at a region extending below the top surface of the STI structure, wherein the fourth width is less than the third width.

8. The semiconductor device of claim 1, wherein the dielectric layer extends below the top surface of the STI structure to a first point in the STI structure, wherein the first point is between approximately 10% and 70% of a thickness of the STI structure.

9. A semiconductor device, comprising:

a first portion of a metal gate line and a collinear second portion of the metal gate line, wherein the first portion has a first end and the collinear second portion has a second end; and

a dielectric layer extending from the first end to the second end; and

a shallow trench isolation structure underlying the dielectric layer;

wherein the dielectric layer has a first width and a second width, wherein the first width is defined as extending from an interface with a first sidewall of the shallow trench isolation structure to an interface with a second sidewall of the shallow trench isolation structure, and the second width is defined at a region above the interface with the shallow trench isolation structure, the second width greater than the first width.

10. The semiconductor device of claim 9, wherein the dielectric layer has a first composition and the shallow trench isolation structure has a second composition different than the first composition.

11. The semiconductor device of claim 9, wherein the first portion of the metal gate line includes a plurality of work function layers and the second portion of the metal gate line includes the same plurality of work function layers.

12. The semiconductor device of claim 9, wherein the dielectric layer has a third width at another portion above the region above the region above the interface with the shallow trench isolation structure.

13. The semiconductor device of claim 12, wherein the third width is approximately equal to the first width.

14. The semiconductor device of claim 9, wherein the dielectric layer has the first width extending from the interface of the first sidewall of the shallow trench isolation structure to the interface with the second sidewall of the shallow trench isolation structure for a distance of between 10% and 70% of a thickness of the shallow trench isolation structure.

15. The semiconductor device of claim 9, further comprising:

an interlayer dielectric (ILD) layer disposed over the shallow trench isolation structure and abutting the dielectric layer.

16. The semiconductor device of claim 15, wherein the ILD layer has a different composition than the dielectric layer.

17. A semiconductor device, comprising:

a first fin and a second fin extending vertically from a substrate and extending in a first direction;

a first metal gate structure disposed over a region of the first fin, wherein the first metal gate structure extends in a second direction, the second direction perpendicular to the first direction;

a second metal gate structure disposed over a region of the second fin and extends in the second direction, wherein the first and second metal gate structures are separated by a cut gate region filled with dielectric material; and

wherein the first metal gate structure has a first face abutting the dielectric material of the cut gate region, wherein the first face has a first width adjacent the STI structure and a second width above the first width, the second width less than the first width and the first width and the second width each defined in the first direction.

18. The semiconductor device of claim 17, wherein the dielectric material extends below a top surface of the STI structure.

19. The semiconductor device of claim 17, wherein the first metal gate structure includes an n-type work function metal.

20. The semiconductor device of claim 17, wherein the first metal gate structure includes a gate stack of a high-k dielectric layer, a TiN layer, and a TaN layer.