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THREE-DIMENSIONAL MEMORY DEVICE AND METHODS OF MAKING THE SAME USING REPLACEMENT DRAIN SELECT GATE ELECTRODES

  • US 20190326306A1
  • Filed: 06/29/2018
  • Published: 10/24/2019
  • Est. Priority Date: 04/24/2018
  • Status: Active Grant
First Claim
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1. A three-dimensional memory device, comprising:

  • an alternating stack of insulating layers and electrically conductive layers located over a substrate;

    drain-select-level electrically conductive strips located over the alternating stack;

    a drain-select-level isolation structure located between a neighboring pair of the drain-select-level electrically conductive strips;

    memory stack structures comprising a respective memory film and a respective vertical semiconductor channel vertically extending through the alternating stack and a respective one of the drain-select-level electrically conductive strips, wherein the memory stack structures contact, and are completely laterally surrounded by, a cylindrical sidewall of a respective one of the drain-select-level electrically conductive strips; and

    a contact level dielectric layer overlying the drain-select-level electrically conductive strips, the drain-select-level isolation structure and the memory stack structures, wherein the contact level dielectric layer contacts the drain-select-level isolation structure.

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