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VERTICAL-TYPE MEMORY DEVICE

  • US 20190326318A1
  • Filed: 01/08/2019
  • Published: 10/24/2019
  • Est. Priority Date: 04/20/2018
  • Status: Active Grant
First Claim
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1. A vertical-type memory device comprising:

  • a substrate including a first region and a second region, adjacent to the first region;

    a first conductive layer extending on the first region and the second region; and

    a second conductive layer extending on the first region and the second region, the second conductive layer stacked on the first conductive layer,wherein an upper surface of the substrate has a step portion at a boundary between the first region and the second region, and the upper surface of the substrate in the first region is lower than in the second region.

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