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SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

  • US 20190326320A1
  • Filed: 06/26/2019
  • Published: 10/24/2019
  • Est. Priority Date: 07/17/2017
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, the method comprising:

  • forming a sacrificial group having a buried pattern embedded therein;

    forming a stack structure over the sacrificial group, wherein the stack structure includes first material layers and second material layers, which are alternately stacked, and is divided into a first region overlapping with the buried pattern and a second region extending from the first region;

    forming a slit exposing a sidewall of the stack structure therethrough by etching the first region of the stack structure through an etching process that is stopped when the buried pattern is exposed; and

    separating the buried pattern into gate patterns by etching a portion of the buried pattern exposed through the slit.

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