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SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

  • US 20190326323A1
  • Filed: 07/03/2019
  • Published: 10/24/2019
  • Est. Priority Date: 12/19/2016
  • Status: Active Grant
First Claim
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1. A method of manufacturing a semiconductor device, comprising:

  • forming a tunnel insulating layer in a channel hole passing through a preliminary stack structure in which interlayer insulating layers and material layers are alternately stacked;

    forming recess areas by removing the material layers exposed through a slit passing through the preliminary stack structure;

    forming a data storage layer in the recess areas through the slit;

    partially removing the data storage layer through the slit such that a data storage pattern remains on a sidewall of each of the recess areas adjacent to the tunnel insulating layer; and

    forming a blocking insulating layer on the data storage pattern through the slit.

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