SEMICONDUCTOR DEVICES
First Claim
1. A semiconductor device, comprising:
- a gate structure on a substrate;
a source contact and a drain contact on opposite sides of the gate structure, respectively, the source contact and the drain contact each connected to the substrate;
a magnetic tunnel junction connected to the drain contact;
a first conductive line connected to the source contact; and
a second conductive line connected to the first conductive line through a first via contact,wherein the second conductive line is distal from the substrate in relation to the first conductive line,wherein the first conductive line and the second conductive line extend in parallel to each other along a first direction,wherein each conductive line of the first conductive line and the second conductive line has a width in a second direction intersecting the first direction, the width of the first conductive line and the width of the second conductive line being a common width, andwherein the first via contact is aligned with the source contact along a third direction perpendicular to a top surface of the substrate.
1 Assignment
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Accused Products
Abstract
A semiconductor device includes a gate structure on a substrate, source and drain contacts respectively on opposite sides of the gate structure and connected to the substrate, a magnetic tunnel junction connected to the drain contact, a first conductive line connected to the source contact, and a second conductive line connected to the first conductive line through a first via contact. The second conductive line is distal to the substrate in relation to the first conductive line. The first and second conductive lines extend in parallel along a first direction. The first and second conductive lines have widths in a second direction intersecting the first direction. The widths of the first and second conductive lines are the same. The first via contact is aligned with the source contact along a third direction perpendicular to a top surface of the substrate.
12 Citations
21 Claims
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1. A semiconductor device, comprising:
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a gate structure on a substrate; a source contact and a drain contact on opposite sides of the gate structure, respectively, the source contact and the drain contact each connected to the substrate; a magnetic tunnel junction connected to the drain contact; a first conductive line connected to the source contact; and a second conductive line connected to the first conductive line through a first via contact, wherein the second conductive line is distal from the substrate in relation to the first conductive line, wherein the first conductive line and the second conductive line extend in parallel to each other along a first direction, wherein each conductive line of the first conductive line and the second conductive line has a width in a second direction intersecting the first direction, the width of the first conductive line and the width of the second conductive line being a common width, and wherein the first via contact is aligned with the source contact along a third direction perpendicular to a top surface of the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A semiconductor device, comprising:
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a substrate including a first active region and a second active region; a pair of first gate structures extending over the first active region; a pair of second gate structures extending over the second active region; a first source contact between the pair of first gate structures, the first source contact connected to the first active region; a second source contact between the pair of second gate structures, the second source contact connected to the second active region; a first conductive line extending over the pair of first gate structures and the pair of second gate structures, the first conductive line connected to the first source contact and the second source contact; and a second conductive line connected to the first conductive line through a plurality of first via contacts, wherein the second conductive line is distal the substrate in relation to the first conductive line, wherein the first conductive line and the second conductive line extend in parallel to each other along a first direction, wherein one via contact of the plurality of first via contacts is aligned with the first source contact along a direction perpendicular to a top surface of the substrate, and wherein another via contact of the plurality of first via contacts is aligned with the second source contact along the direction perpendicular to the top surface of the substrate. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19, 20)
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21-23. -23. (canceled)
Specification