Please download the dossier by clicking on the dossier button x
×

SEMICONDUCTOR DEVICE HAVING RESISTANCE ELEMENTS AND FABRICATION METHOD THEREOF

  • US 20190326386A1
  • Filed: 07/02/2019
  • Published: 10/24/2019
  • Est. Priority Date: 02/19/2016
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device fabrication method comprising:

  • acquiring a relationship between a concentration of first impurities and a temperature coefficient for a first polycrystalline silicon having a first width and a second polycrystalline silicon having a second width larger than the first width;

    setting, on the basis of the relationship, a first concentration of the first impurities in the first polycrystalline silicon and a second concentration of the first impurities in the second polycrystalline silicon; and

    forming the first polycrystalline silicon containing the first impurities at the first concentration and the second polycrystalline silicon containing the first impurities at the second concentration.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×