THREE LAYER PHOTOLITHOGRAPHY

• US 20190326464A1
• Filed: 04/24/2019
• Published: 10/24/2019
• Est. Priority Date: 04/24/2018
• Status: Abandoned Application

• Current Assignee: Advanced Research Corporation
• Original Assignee: Advanced Research Corporation
• Inventors: Wagner, Greg, Tersteeg, Joe
• Application Number:
  US16/393,954
• Publication Number:
  US 20190326464A1
• Time in Patent Office: Days
• CPC Class Codes: H01L 24/14 of a plurality of bump connectors
• CPC Class Codes: H01L 31/02005 for device characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/02161 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/022408 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/118 of the surface barrier or shallow PN junction detector type, e.g. surface barrier alpha-particle detectors
• CPC Class Codes: H01L 31/186 Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation

Abstract

Various methods and systems are provided for three layer photolithography. In one embodiment, a process includes disposing a radiation hard dielectric layer on a substrate, the radiation hard dielectric layer comprising a dielectric that maintains defined dielectric properties when exposed to at least 50 mrads of proton radiation and/or at least 4×10¹⁵ of 1 MeV equivalent neutron radiation; patterning the radiation hard dielectric layer; and treating the radiation hard dielectric layer. In one embodiment, a device includes a substrate and a patterned radiation hard dielectric layer disposed on the substrate, the radiation hard dielectric layer comprising a dielectric that maintains defined dielectric properties when exposed to at least 50 mrads of proton radiation and/or at least 4×10¹⁵ of 1 MeV equivalent neutron radiation.

Claims

1. A process, comprising:

disposing a radiation hard dielectric layer on a substrate, the radiation hard dielectric layer comprising a dielectric that maintains defined dielectric properties when exposed to at least 50 mrads of proton radiation or at least 4×

10¹⁵ of 1 MeV equivalent neutron radiation;

patterning the radiation hard dielectric layer; and

treating the radiation hard dielectric layer.

2. The process of claim 1, wherein the dielectric maintains at least a dielectric strength of 100V/micron when exposed to at least 50 mrads of proton radiation or at least 4×

10¹⁵ of 1 MeV equivalent neutron radiation.

3. The process of claim 1, wherein treating the radiation hard dielectric layer comprises curing the radiation hard dielectric layer.

4. The process of claim 1, further comprising forming and patterning one or more photoresist layer on the radiation hard dielectric layer.

5. The process of claim 4, further comprising:

disposing bump metal on the one or more photoresist layer and in patterned openings of the radiation hard dielectric layer; and

removing the one or more photoresist layer and the bump metal on the one or more photoresist layer.

6. The process of claim 1, wherein the radiation hard dielectric layer is disposed on the substrate by spin coating.

7. The process of claim 1, wherein the radiation hard dielectric layer is treated using thermal, chemical or plasma based processing.

8. The process of claim 1, wherein a first photoresist layer is formed on the radiation hard dielectric layer, and a second photoresist layer is formed on the first photoresist layer.

9. The process of claim 1, wherein the bump metal is deposited using evaporation.

10. The process of claim 1, wherein the bump metal is indium.

11. The process of claim 1, wherein the radiation hard dielectric layer comprises a polyimide, a benzocyclobutene, an SU-8, a poly(p-xylylene) or derivatives thereof.

12. A device, comprising:

a substrate; and

a patterned radiation hard dielectric layer disposed on the substrate, the radiation hard dielectric layer comprising a dielectric that maintains defined dielectric properties when exposed to at least 50 mrads of proton radiation or at least 4×

10¹⁵ of 1 MeV equivalent neutron radiation.

13. The device of claim 12, wherein the patterned dielectric maintains at least a dielectric strength of 100V/micron when exposed to at least 50 mrads of proton radiation or at least 4×

10¹⁵ of 1 MeV equivalent neutron radiation.

14. The device of claim 12, where the patterned radiation hard dielectric layer comprises openings extending through the radiation hard dielectric layer.

15. The device of claim 14, further comprising bump metal disposed in the openings of the patterned radiation hard dielectric layer.

16. The device of claim 15, where the bump metal does not overlap the patterned radiation hard dielectric layer.

17. The device of claim 15, wherein the bump metal is disposed on the substrate.