SEMICONDUCTOR RELAY
First Claim
1. A semiconductor relay, comprising:
- a light-emitting element; and
a light-receiving element facing the light-emitting element, whereinthe light-receiving element includesa substrate,a nitride semiconductor layer having a direct transition type, the nitride semiconductor layer being disposed on the substrate and having a semi-insulating property,a first electrode electrically connected to the nitride semiconductor layer, the first electrode having at least a part in contact with the nitride semiconductor layer, anda second electrode electrically connected to the nitride semiconductor layer, the second electrode having at least a part in contact with either one of the nitride semiconductor layer and the substrate, in a position separated from the first electrode, andthe nitride semiconductor layer is reduced in resistance by absorbing light from the light-emitting element.
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Accused Products
Abstract
A semiconductor relay includes: a light-emitting element; and a light-receiving element facing the light-emitting element. The light-receiving element includes: a substrate; a semiconductor layer having a direct transition type, the semiconductor layer being disposed on the substrate and having a semi-insulating property; a first electrode having at least a part in contact with the semiconductor layer; and a second electrode having at least a part in contact with either one of the semiconductor layer and the substrate, in a position separated from the first electrode. The semiconductor layer is reduced in resistance by absorbing light from the light-emitting element.
7 Citations
15 Claims
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1. A semiconductor relay, comprising:
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a light-emitting element; and a light-receiving element facing the light-emitting element, wherein the light-receiving element includes a substrate, a nitride semiconductor layer having a direct transition type, the nitride semiconductor layer being disposed on the substrate and having a semi-insulating property, a first electrode electrically connected to the nitride semiconductor layer, the first electrode having at least a part in contact with the nitride semiconductor layer, and a second electrode electrically connected to the nitride semiconductor layer, the second electrode having at least a part in contact with either one of the nitride semiconductor layer and the substrate, in a position separated from the first electrode, and the nitride semiconductor layer is reduced in resistance by absorbing light from the light-emitting element. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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Specification