Radiation-Emitting Semiconductor Chip
2 Assignments
0 Petitions
Accused Products
Abstract
A radiation-emitting semiconductor chip is disclosed. In an embodiment, a radiation-emitting semiconductor chip includes a semiconductor body configured to generate radiation, a first contact layer having a first contact area for external electrical contacting the semiconductor chip and a first contact finger structure connected to the first contact area, a second contact layer having a second contact area for external electrical contacting the semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places, a current distribution layer electrically conductively connected to the first contact layer, a connection layer electrically conductively connected to the first contact layer via the current distribution layer and an insulation layer arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at least one opening.
8 Citations
38 Claims
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1-20. -20. (canceled)
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21. A radiation-emitting semiconductor chip comprising:
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a semiconductor body having an active region configured to generate radiation; a first contact layer having a first contact area for external electrical contacting the semiconductor chip and a first contact finger structure connected to the first contact area; a second contact layer having a second contact area for external electrical contacting the semiconductor chip and a second contact finger structure connected to the second contact area, wherein the first contact finger structure and the second contact finger structure overlap in places in plan view of the semiconductor chip; a current distribution layer electrically conductively connected to the first contact layer; a connection layer electrically conductively connected to the first contact layer via the current distribution layer; and an insulation layer containing a dielectric material, wherein the insulation layer is arranged in places between the connection layer and the current distribution layer, wherein the insulation layer has at least one opening, in which the connection layer and the current distribution layer adjoin one another, and wherein a diameter of the opening is between 2 μ
m and 6 μ
m inclusive. - View Dependent Claims (22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38)
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Specification