SEMICONDUCTOR DEVICE
First Claim
1. A semiconductor device comprising:
- a vertical structure disposed on a semiconductor substrate and extending in a direction perpendicular to an upper surface of the semiconductor substrate; and
a horizontal structure connected to a side surface of the vertical structure, and parallel to the upper surface of the semiconductor substrate,wherein the horizontal structure includes a plurality of semiconductor regions sequentially arranged, in a direction away from the side surface of the vertical structure and parallel to the upper surface of the semiconductor substrate, and the plurality of semiconductor regions form at least one PN junction.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device includes interlayer insulating layers and horizontal structures alternately and repeatedly disposed on a semiconductor substrate, separation structures extending in a direction perpendicular to an upper surface of the semiconductor substrate on the semiconductor substrate, to extend in a first horizontal direction parallel to the upper surface of the semiconductor substrate, and vertical structures disposed between the separation structures. Each of the horizontal structures includes a plurality of semiconductor regions, and the plurality of semiconductor regions of each of the plurality of semiconductor regions include a first semiconductor region and a second semiconductor region sequentially arranged in a direction away from a side surface of a corresponding one of the vertical structures and having different conductivity types.
6 Citations
21 Claims
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1. A semiconductor device comprising:
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a vertical structure disposed on a semiconductor substrate and extending in a direction perpendicular to an upper surface of the semiconductor substrate; and a horizontal structure connected to a side surface of the vertical structure, and parallel to the upper surface of the semiconductor substrate, wherein the horizontal structure includes a plurality of semiconductor regions sequentially arranged, in a direction away from the side surface of the vertical structure and parallel to the upper surface of the semiconductor substrate, and the plurality of semiconductor regions form at least one PN junction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device comprising:
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interlayer insulating layers and horizontal structures alternately and repeatedly stacked on a semiconductor substrate; and vertical structures disposed on a semiconductor substrate and extending in a direction perpendicular to an upper surface of the semiconductor substrate, wherein each of the horizontal structures includes a plurality of semiconductor regions and a first conductive pattern adjacent to the plurality of semiconductor regions, wherein the plurality of semiconductor regions of each of the horizontal structures include a first semiconductor region and a second semiconductor region, sequentially arranged in a direction away from a side surface of a corresponding one of the vertical structures and having different conductivity types, and wherein each first conductive pattern is spaced apart from a corresponding one of the vertical structures. - View Dependent Claims (11, 12, 13, 14)
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15. A semiconductor device comprising:
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interlayer insulating layers and horizontal structures alternately and repeatedly disposed on a semiconductor substrate; separation structures disposed between the horizontal structures, extending in a direction perpendicular to an upper surface of the semiconductor substrate on the semiconductor substrate, and extending in a first horizontal direction parallel to the upper surface of the semiconductor substrate; and vertical structures disposed between the separation structures, wherein each of the horizontal structures includes a plurality of semiconductor regions, and wherein the plurality of semiconductor regions of each of the plurality of semiconductor regions include a first semiconductor region and a second semiconductor region sequentially arranged in a direction away from a side surface of a corresponding one of the vertical structures and having different conductivity types. - View Dependent Claims (16, 17, 18, 19, 20)
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21-25. -25. (canceled)
Specification