LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

• US 20190326538A1
• Filed: 07/01/2019
• Published: 10/24/2019
• Est. Priority Date: 09/16/2009
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: EGUCHI, Shingo, OIKAWA, Yoshiaki, OKAZAKI, Kenichi, MARUYAMA, Hotaka
• Granted Patent: US 11,171,298 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 27/12 the substrate being other than a semiconductor body, e.g. an insulating body
• CPC Class Codes: H01L 27/1225 with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/78678 with inverted-type structure, e.g. with bottom gate
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
• CPC Class Codes: H10K 50/11 characterised by the electroluminescent [EL] layers
• CPC Class Codes: H10K 59/1213 the pixel elements being TFTs
• CPC Class Codes: H10K 59/126 Shielding, e.g. light-blocking means over the TFTs
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals
• CPC Class Codes: H10K 77/111 Flexible substrates
• CPC Class Codes: Y02E 10/549 Organic PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

An object of the invention is to improve the reliability of a light-emitting device. Another object of the invention is to provide flexibility to a light-emitting device having a thin film transistor using an oxide semiconductor film. A light-emitting device has, over one flexible substrate, a driving circuit portion including a thin film transistor for a driving circuit and a pixel portion including a thin film transistor for a pixel. The thin film transistor for a driving circuit and the thin film transistor for a pixel are inverted staggered thin film transistors including an oxide semiconductor layer which is in contact with a part of an oxide insulating layer.

Claims

1. An electronic device comprising:

a display panel comprising;

a display portion comprising a display element and a transistor;

a first housing over the display panel; and

a wiring board electrically connected to the display panel,

wherein the wiring board is arranged in a backside of the display panel,

wherein the first housing includes a front region and a first region where the first housing is curved,

wherein the display panel is continuously formed on the front region and the first region, and

wherein a display region of the display panel overlaps with the first region.

3. The electronic device according to claim 1, wherein the display panel further comprises a driving circuit portion electrically connected to the display portion.

4. The electronic device according to claim 1, further comprising a touch panel overlapping with the display portion,

wherein the display panel further comprises a flexible substrate,

wherein the display portion is over the flexible substrate, and

wherein the display element is a light-emitting element.

5. The electronic device according to claim 1, further comprising a battery overlapping with the display panel.

6. The electronic device according to claim 1, wherein the display panel overlaps with a whole of a surface of the wiring board.

7. The electronic device according to claim 1, further comprising a second housing opposing to the first housing,

wherein the second housing includes a back region and a second region where the second housing is curved.

8. The electronic device according to claim 1, wherein a corner portion of the first housing has a round shape when seen from a front side.

9. The electronic device according to claim 1, wherein the electronic device is a mobile phone.

10. The electronic device according to claim 1,

wherein the transistor is formed over an insulating layer, and

wherein the insulating layer comprises at least one layer selected from the group consisting of a silicon oxide layer, a silicon nitride layer, a silicon oxide layer containing nitrogen, and a silicon nitride layer containing oxygen.

2. An electronic device comprising:

a display panel comprising;

a display portion comprising a display element and a transistor; and

a wiring board electrically connected to the display panel,

wherein the wiring board is arranged in a backside of the display panel,

wherein the display panel includes a first region where the display panel is curved,

wherein the first region is between a front region of the display panel and an edge of the display panel, and

wherein a display region of the display panel overlaps with the first region.

11. The electronic device according to claim 2, wherein the display panel further comprises a driving circuit portion electrically connected to the display portion.

12. The electronic device according to claim 2, further comprising a touch panel overlapping with the display portion,

wherein the display panel further comprises a flexible substrate,

wherein the display portion is over the flexible substrate, and

wherein the display element is a light-emitting element.

13. The electronic device according to claim 2, further comprising a battery overlapping with the display panel.

14. The electronic device according to claim 2, wherein the display panel overlaps with a whole of a surface of the wiring board.

15. The electronic device according to claim 2, wherein the electronic device is a mobile phone.

16. The electronic device according to claim 2,

wherein the transistor is formed over an insulating layer, and

wherein the insulating layer comprises at least one layer selected from the group consisting of a silicon oxide layer, a silicon nitride layer, a silicon oxide layer containing nitrogen, and a silicon nitride layer containing oxygen.