METHOD OF FORMING PATTERN USING SUPRAMOLECULAR NANOSTRUCTURES

• US 20190326559A1
• Filed: 11/21/2018
• Published: 10/24/2019
• Est. Priority Date: 04/20/2018
• Status: Abandoned Application

• Current Assignee: Korea Advanced Institute of Science and Technology
• Original Assignee: Korea Advanced Institute of Science and Technology
• Inventors: JUNG, Hee-Tae, Park, Kangho, Jung, Woo-Bin, Kwon, Kiok
• Application Number:
  US16/197,531
• Publication Number:
  US 20190326559A1
• Time in Patent Office: Days
• CPC Class Codes: C08G 83/001 Macromolecular compounds containing organic and inorganic sequences, e.g. organic polymers grafted onto silica
• CPC Class Codes: C08G 83/002 Dendritic macromolecules
• CPC Class Codes: C08L 101/005 Dendritic macromolecules
• CPC Class Codes: H01P 11/001 Manufacturing waveguides or transmission lines of the waveguide type
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/191 characterised by provisions for the orientation or alignment of the layer to be deposited
• CPC Class Codes: H10K 71/20 Changing the shape of the active layer in the devices, e.g. patterning
• CPC Class Codes: H10K 71/821 Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
• CPC Class Codes: H10K 85/791 Starburst compounds

Abstract

According to the present disclosure, a method of forming a pattern may include forming guide patterns on a substrate, wherein a trench is provided between the guide patterns, forming an organic-inorganic pattern including organic supramolecular structures in the trench, and annealing the organic-inorganic pattern, thereby aligning the dendrimer structures in parallel with one direction.

Claims

1. A method of forming a pattern, comprising:

forming guide patterns on a substrate, wherein a trench is provided between the guide patterns;

forming an organic-inorganic pattern comprising organic supramolecular structures in the trench; and

annealing the organic-inorganic pattern to align the organic supramolecular structures in parallel with one direction.

2. The method of claim 1, wherein the organic supramolecular structures, before the annealing the organic-inorganic pattern, comprises:

a first organic supramolecular structure arranged in parallel with a first direction; and

a second organic supramolecular structure arranged in parallel with a second direction.

3. The method of claim 2, wherein the align the organic supramolecular structures in parallel with the one direction comprises arranging the second organic supramolecular structure in parallel with the first direction.

4. The method of claim 1, wherein the guide patterns extend in parallel with the one direction.

5. The pattern forming method of claim 4, wherein a height of the organic-inorganic pattern is 0.1 nm to 1 μ

m, and the height of the organic-inorganic pattern is at least 0.001 times and less than 1 times higher than a height of the guide patterns.

6. The method of claim 1, wherein the organic supramolecular structures comprise dendrimer molecules.

7. The method of claim 1, wherein the guide patterns extend in parallel with other direction, and the other direction is perpendicular to the one direction.

8. The method of claim 7, wherein a height of the organic-inorganic pattern is 1 times to 1.5 times higher than a height of the guide patterns.

9. The method of claim 1, wherein the guide patterns comprise a material different from the substrate, and the trench exposes un upper surface of the substrate.

10. The method of claim 1, wherein the forming guide patterns comprises removing a part of the substrate, thereby forming trenches, and the guide patterns comprise the same material as the substrate.

11. The method of claim 1, wherein the annealing the organic-inorganic pattern comprises:

thermally treating the organic-inorganic pattern under conditions same temperature or higher temperature than an isotropic phase transition temperature; and

cooling the organic-inorganic pattern to room temperature.

12. The method of claim 1, wherein the forming the organic-inorganic pattern comprises:

preparing an organic solution comprising dendrimer molecules; and

applying the organic solution into the trench.