SENSOR PIXEL OPERATING IN OPTICAL MODE AND CAPACITIVE MODE AND IMAGE SENSOR INCLUDING THE SAME

• US 20190327435A1
• Filed: 04/09/2019
• Published: 10/24/2019
• Est. Priority Date: 04/19/2018
• Status: Active Grant

• Current Assignee: Silicon Display Technology
• Original Assignee: Silicon Display Technology
• Inventors: Kim, Kijoong, Yu, Jin Hyeong, Park, Young Man
• Granted Patent: US 10,931,906 B2
• Time in Patent Office: Days
• CPC Class Codes: G06V 40/1318 using electro-optical elements or layers, e.g. electroluminescent sensing
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14612 involving a transistor
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14678 Contact-type imagers
• CPC Class Codes: H04N 25/75 Circuitry for providing, modifying or processing image signals from the pixel array
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors

Abstract

There is provided a sensor pixel, including: a first transistor controlled depending on a mode selection voltage supplied to one end thereof; a second transistor including a gate connected to the other end of the first transistor; and a photoconductor connected to one end of the second transistor, wherein the sensor pixel operates in an optical mode when the first transistor is turned on, and the sensor pixel operates in a capacitive mode when the first transistor is turned off.

Claims

1. A sensor pixel, comprising:

a first transistor controlled depending on a mode selection voltage supplied to one end thereof;

a second transistor including a gate connected to the other end of the first transistor; and

a photoconductor connected to one end of the second transistor, wherein the sensor pixel operates in an optical mode when the first transistor is turned on and operates in a capacitive mode when the first transistor is turned off.

2. The sensor pixel of claim 1, wherein:

the first transistor is turned off and the photoconductor is turned on when the mode selection voltage is a positive voltage of a first level.

3. The sensor pixel of claim 1, wherein:

the first transistor is turned on and the photoconductor is turned off when the mode selection voltage is a negative voltage of a second level.

4. The sensor pixel of claim 3, wherein:

an off current of the photoconductor changes depending on light to be irradiated to the photoconductor, and a current flowing through the second transistor changes depending on the off current.

5. The sensor pixel of claim 3, further comprising:

a coupling capacitor including one electrode connected to the gate of the second transistor and the other electrode to which a coupling pulse is applied,

wherein a negative voltage of the coupling pulse is higher than the second level.

6. The sensor pixel of claim 1, further comprising:

a third transistor including a gate connected to the other end of the second transistor;

a fourth transistor including one end connected to one end of the third transistor and the other end connected to a data line;

a fifth transistor including one end connected to the other end of the first transistor and the other end to which a coupling pulse is applied;

a sixth transistor including one end connected to the other end of the second transistor and the other end to which the coupling pulse is applied;

a coupling capacitor including one electrode connected to the gate of the second transistor and the other electrode to which the coupling pulse is applied;

a sensing electrode connected to the gate of the second transistor; and

a storage capacitor including one electrode connected to the gate of the third transistor and the other electrode to which a driving voltage is applied,

wherein the fourth transistor performs a switching operation by a current gate signal and the fifth transistor performs a switching operation by a previous gate signal.

7. The sensor pixel of claim 6, wherein:

the sensing electrode forms a capacitor together with a fingerprint which is a recognition target when the first transistor is turned off.

8. An image sensor, comprising:

a sensor panel including a plurality of pixels, a plurality of gate lines connected to the plurality of pixels, a plurality of date lines, and a plurality of mode selection lines;

a gate driving circuit supplying a plurality of gate signals corresponding to the plurality of gate lines;

a sensor signal readout circuit receiving a plurality of data signals from the plurality of pixels through the plurality of date lines; and

a mode selection unit supplying a mode selection voltage to the plurality of mode selection lines,

wherein each of the plurality of pixels operates in one of a capacitive mode and an optical mode depending on the mode selection voltage.

9. The image sensor of claim 8, wherein:

each of the plurality of pixels includes;

a first transistor controlled depending on the mode selection voltage supplied to one end thereof;

a second transistor including a gate connected to the other end of the first transistor; and

a photoconductor connected to one end of the second transistor, and

each of the plurality of pixels operates in an optical mode when the first transistor is turned on, and operates in a capacitive mode when the first transistor is turned off.

10. The image sensor of claim 9, wherein:

the first transistor is turned off and the photoconductor is turned on when the mode selection voltage is a positive voltage of a first level.

11. The image sensor of claim 9, wherein:

the first transistor is turned on and the photoconductor is turned off when the mode selection voltage is a negative voltage of a second level.

12. The image sensor of claim 11, wherein:

an off current of the photoconductor changes depending on light to be irradiated to the photoconductor, and a current flowing through the second transistor changes depending on the off current.

13. The image sensor of claim 9, wherein:

each of the plurality of pixels further includes

a coupling capacitor including one electrode connected to the gate of the second transistor and the other electrode connected to a corresponding coupling pulse line, and

the other end of the second transistor is connected to the corresponding coupling pulse line, and when the mode selection voltage is a negative voltage of a second level, a negative voltage of the coupling pulse supplied to the corresponding coupling pulse line is higher than the second level.

14. The image sensor of claim 9, wherein:

each of the plurality of pixels further includes

a third transistor including a gate connected to the other end of the second transistor;

a fourth transistor including one end connected to one end of the third transistor, the other end connected to a corresponding data line, and a gate connected to a corresponding gate line;

a fifth transistor including one end connected to the other end of the first transistor, the other end connected to a corresponding coupling pulse line, and a gate connected to a previous gate line of the corresponding gate line;

a sixth transistor including one end connected to the other end of the second transistor, the other end connected to the corresponding coupling pulse line, and a gate connected to the previous gate line;

a coupling capacitor connected between the gate of the second transistor and the corresponding coupling pulse line;

a sensing electrode connected to the gate of the second transistor; and

a storage capacitor including one electrode connected to the gate of the third transistor and the other electrode to which a driving voltage is applied.

15. The image sensor of claim 14, wherein:

in each of the plurality of pixels,

the sensing electrode forms a capacitor together with a fingerprint which is a recognition target when the first transistor is turned off.