SUBSTRATE PROCESSING APPARATUS AND METHOD

• US 20190330740A1
• Filed: 04/30/2018
• Published: 10/31/2019
• Est. Priority Date: 04/30/2018
• Status: Active Application

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Klaver, Arjen
• Application Number:
  US15/967,146
• Publication Number:
  US 20190330740A1
• Time in Patent Office: Days
• CPC Class Codes: C23C 16/4401 Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
• CPC Class Codes: C23C 16/45502 Flow conditions in reaction chamber
• CPC Class Codes: C23C 16/4557 Heated nozzles
• CPC Class Codes: C23C 16/45578 Elongated nozzles, tubes with holes
• CPC Class Codes: C23C 16/4583 the substrate being supported substantially horizontally
• CPC Class Codes: C23C 16/52 Controlling or regulating the coating process C23C16/45557, C23C16/279 take precedence
• CPC Class Codes: H01L 21/67017 Apparatus for fluid treatment H01L21/67126, H01L21/6715 take precedence
• CPC Class Codes: H01L 21/67103 mainly by conduction

Abstract

A substrate processing apparatus with a reaction chamber and a substrate holder constructed and arranged to hold at least one substrate in said reaction chamber is provided. A first and second gas injector provides a process gas to the interior of the reaction chamber from a source pipe. A gas control system provides a flow of process gas from the source pipe to the first injector while restricting a flow of the same process gas from the source pipe to the second injector.

Claims

1. A substrate processing apparatus comprising:

a reaction chamber;

a substrate holder constructed and arranged to hold at least one substrate in said reaction chamber; and

,

a gas injector system constructed and arranged to provide a process gas to the interior of the reaction chamber and provided with a gas control system constructed and arranged to control the process gas flow from a source pipe;

wherein the gas injector system comprises a first and second injector for the same process gas and the gas control system is constructed, arranged, and/or programmed to provide the flow of the process gas from the source pipe to one of the first and second injectors while restricting a flow of the same process gas to another of the first and second injectors.

2. The substrate processing apparatus according to claim 1, wherein the gas control system is constructed, arranged and/or programmed to switch the flow of process gas from said one of the first and second injector to the other of the first and second injectors.

3. The substrate processing apparatus according to claim 2, wherein the gas control system is constructed, arranged and/or programmed to restrict the flow of the process gas from the source pipe to said one of the first and second injector after switching the flow of process gas from said one of the first and second injector to the other of the first and second injectors.

4. The substrate processing apparatus according to claim 2, wherein the gas control system is provided with a timer and is constructed and/or programmed to switch after a predetermined time period.

5. The substrate processing apparatus according to claim 2, wherein the gas control system is provided with a gas flow measurement device to measure the flow of process gas and the gas control system is constructed and/or programmed to switch if the flow of process gas becomes lower than a certain threshold value.

6. The substrate processing apparatus according to claim 1, wherein the apparatus comprises a liner constructed and arranged to extend in the interior of the reaction chamber along the walls of the reaction chamber.

7. The substrate processing apparatus according to claim 6, wherein the liner comprises a substantial cylindrical wall delimited by a liner opening at a lower end and a top closure at a higher end, the liner being substantially closed above the liner opening for gasses.

8. The substrate processing apparatus according to claim 7, wherein the first and second injectors are constructed and arranged along the substantially cylindrical wall of the liner towards the higher end.

9. The substrate processing apparatus according to claim 1, wherein the first and second injectors are elongated and are provided with a pattern of openings.

10. The substrate processing apparatus according to claim 9, wherein an inner cross-section area of a gas conduction channel inside the injector is between 100 and 1500 mm2.

11. The substrate processing apparatus according to claim 10, wherein the inner cross-section of the gas conduction channel inside the injector has a shape with a dimension in a direction tangential to the circumference of the substantially cylindrical reaction chamber which is larger than a dimension in a radial direction.

12. The substrate processing apparatus according to claim 9, wherein an area of at least one opening may be between 1 to 200 mm².

13. The substrate processing apparatus according to claim 9, wherein a distance between the openings decrease when going from a lower end to a top end of the injector.

14. The substrate processing apparatus according to claim 9, wherein the openings are configured such that gas is injected in at least two different directions.

15. A substrate processing method comprising:

providing a substrate on a substrate holder in a reaction chamber;

providing a flow of a process gas from a source pipe with a first gas injector into the interior of the reaction chamber; and

,

restricting a flow of the same process gas from the source pipe to a second injector into the interior of the reaction chamber.

16. The substrate processing method according to claim 15, wherein the method comprises switching the flow of the process gas from the first to the second injector.

17. The substrate processing method according to claim 16, wherein the method comprises restricting the flow of the process gas from the source pipe to the first injector after switching the flow of process gas from the first to the second injector.

18. The substrate processing method according to claim 16, wherein the method comprises switching the flow of process gas from the first to the second injector after a predetermined time period.

19. The substrate processing method according to claim 16, wherein the method comprises switching the flow of process gas from the first to the second injector if the flow of process gas becomes lower than a certain threshold value, particles are detected or the uniformity of deposition on the wafer is not good.

20. The substrate processing method according to claim 17, wherein the method comprises replacing the first and second injectors with fresh first and second injectors.