SiC SINGLE CRYSTAL GROWTH APPARATUS AND GROWTH METHOD OF SiC SINGLE CRYSTAL

• US 20190330761A1
• Filed: 04/19/2019
• Published: 10/31/2019
• Est. Priority Date: 04/26/2018
• Status: Active Grant

• Current Assignee: Resonac Corp. (Resonac Holdings Corp.)
• Original Assignee: Showa Denko KK
• Inventors: KINDAICHI, Rimpei, OKUNO, Yoshishige, SHONAI, Tomohiro
• Granted Patent: US 10,988,857 B2
• Time in Patent Office: Days
• CPC Class Codes: C30B 23/00 Single-crystal growth by condensing evaporated or sublimed materials
• CPC Class Codes: C30B 23/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/36 Carbides

Abstract

A SiC single crystal growth apparatus of an embodiment includes a seed crystal installation part in which a seed crystal is installable at a position thereof which faces a raw material; a guide member which extends from a periphery of the seed crystal installation part toward the raw material and guides crystal growth performed inside the guide member; and a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member.

Claims

1. A SiC single crystal growth apparatus, comprising:

a seed crystal installation part in which a seed crystal is installable at a position thereof which faces a raw material;

a guide member which extends from a periphery of the seed crystal installation part toward the raw material and guides crystal growth performed inside the guide member; and

a heat-insulating material which is movable along an extension direction of the guide member on the outside of the guide member.

2. The SiC single crystal growth apparatus according to claim 1, further comprising:

a support which supports the guide member at an end thereof on a raw material side,

wherein the support has a structure which suppresses entry of a raw material gas into the outside of the guide member.

3. A growth method of a SiC single crystal using the SiC single crystal growth apparatus according to claim 1, comprising:

a crystal growth step of growing a single crystal from a seed crystal installed in the seed crystal installation part,

wherein a positional relationship between an end surface of a raw material side of the heat-insulating material and a surface of the single crystal is controlled in a process of the crystal growth step.

4. The growth method of a SiC single crystal according to claim 3, wherein the end surface of the raw material side of the heat-insulating material is controlled to locate within 20 mm from the surface of the single crystal in the process of crystal growth.

5. The growth method of a SiC single crystal according to claim 3, wherein the end surface of the raw material side of the heat-insulating material is controlled to be closer to the seed crystal installation part than the surface of the single crystal in the process of crystal growth.

6. The growth method of a SiC single crystal according to claim 3, wherein a thickness of the heat-insulating material is half or less of a growth amount of the SiC single crystal which is manufactured at 0.2 mm or more.

7. The growth method of a SiC single crystal according to claim 3, wherein the positional relationship between the end surface of the raw material side of the heat-insulating material and the surface of the single crystal is controlled at the start of crystal growth.