QUADRUPLE WELL FOR ELECTRICAL CROSS-TALK NOISE ATTENUATION

• US 20190331773A1
• Filed: 04/27/2018
• Published: 10/31/2019
• Est. Priority Date: 04/27/2018
• Status: Abandoned Application

• Current Assignee: Avago Technologies International Sales Pte Limited (Broadcom, Inc.)
• Original Assignee: Avago Technologies General IP PTE Limited (Broadcom, Inc.)
• Inventors: Enne, Reinhard, Davidovic, Milos, Steinle, Gunther Leopold
• Application Number:
  US15/964,669
• Publication Number:
  US 20190331773A1
• Time in Patent Office: Days
• CPC Class Codes: G01S 17/08 for measuring distance only indirect measurement G01S17/46; active triangulation systems G01S17/48
• CPC Class Codes: G01S 17/894 3D imaging with simultaneous measurement of time-of-flight at a 2D array of receiver pixels, e.g. time-of-flight cameras or flash lidar
• CPC Class Codes: G01S 7/4861 Circuits for detection, sampling, integration or read-out
• CPC Class Codes: H01L 27/1443 with at least one potential jump or surface barrier
• CPC Class Codes: H01L 31/02019 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/022416 comprising ring electrodes
• CPC Class Codes: H01L 31/035272 characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/103 the potential barrier being of the PN homojunction type

Abstract

Systems and circuits directed to a time-of-flight measurement system are provided. More specifically, the time-of-flight measurement system may include an optical sensor module including a substrate of a first conductivity type having an epitaxial layer disposed thereon, a photodetector formed in the first epitaxial layer, a deep well of a second conductivity type formed in the first epitaxial layer, a deep well of the first conductivity type formed in the deep well of the second conductivity type, a well of the second conductivity type formed in the deep well of the first conductivity type, and a well of the first conductivity type formed in the deep well of the first conductivity type. The time-of-flight measurement system may include control logic configured to determine a distance based on a time-of-flight value received from the photodetector.

Claims

1. A semiconductor device comprising:

a substrate of a first conductivity type having an epitaxial layer disposed thereon;

a photodetector formed in the first epitaxial layer;

a deep well of a second conductivity type formed in the first epitaxial layer;

a deep well of the first conductivity type formed in the deep well of the second conductivity type;

a well of the second conductivity type formed in the deep well of the first conductivity type; and

a well of the first conductivity type formed in the deep well of the first conductivity type.

2. The semiconductor device according to claim 1, wherein the deep well of the second conductivity type is connected to a ground potential.

3. The semiconductor device according to claim 2, wherein the deep well of the first conductivity type is connected to the ground potential.

4. The semiconductor device according to claim 1, further comprising:

a first conductivity type contact ring formed around the photodetector.

5. The semiconductor device according to claim 1, further comprising one or more transistors at least partially formed in the well of the second conductivity type and one or more transistors at least partially formed in the well of the first conductivity type.

6. The semiconductor device according to claim 1, wherein a thickness of the deep well of the second conductivity type is greater than or equal to three micrometers.

7. The semiconductor device according to claim 1, wherein an impurity concentration of the epitaxial layer is less than an impurity concentration of the substrate.

8. The semiconductor device according to claim 1, wherein the second conductivity type is an N-type conductivity type.

9. (canceled)

10. (canceled)

11. (canceled)

12. (canceled)

13. A time-of-flight measurement system comprising:

an optical sensor module including;

a substrate of a first conductivity type having an epitaxial layer disposed thereon,

a photodetector formed in the first epitaxial layer,

a deep well of a second conductivity type formed in the first epitaxial layer,

a deep well of the first conductivity type formed in the deep well of the second conductivity type,

a well of the second conductivity type formed in the deep well of the first conductivity type, and

a well of the first conductivity type formed in the deep well of the first conductivity type; and

control logic configured to determine a distance based on a time-of-flight value received from the photodetector.

14. The time-of-flight measurement system according to claim 13, wherein the deep well of the second conductivity type is connected to a ground potential.

15. The time-of-flight measurement system according to claim 14, wherein the deep well of the first conductivity type is connected to the ground potential.

16. The time-of-flight measurement system according to claim 13, further comprising:

a first conductivity type contact ring formed around the photodetector.

17. The time-of-flight measurement system according to claim 13, further comprising one or more transistors at least partially formed in the well of the second conductivity type and one or more transistors at least partially formed in the well of the first conductivity type.

18. The time-of-flight measurement system according to claim 13, wherein a thickness of the deep well of the second conductivity type is greater than or equal to three micrometers.

19. The time-of-flight measurement system according to claim 13, wherein an impurity concentration of the epitaxial layer is less than an impurity concentration of the substrate.

20. The time-of-flight measurement system according to claim 13, wherein the second conductivity type is an N-type conductivity type.

21. A semiconductor device, comprising:

a substrate of a first conductivity type having an epitaxial layer disposed thereon;

a photodetector formed in the first epitaxial layer;

a deep well of a second conductivity type formed in the first epitaxial layer;

a deep well of the first conductivity type formed in the deep well of the second conductivity type;

a well of the second conductivity type formed in the deep well of the first conductivity type;

a well of the first conductivity type formed in the deep well of the first conductivity type; and

a first conductivity type contact ring formed around the photodetector.

22. The semiconductor device of claim 21, further comprising:

one or more transistors at least partially formed in the well of the second conductivity type and one or more transistors at least partially formed in the well of the first conductivity type.

23. The semiconductor device of claim 21, wherein an impurity concentration of the epitaxial layer is less than an impurity concentration of the substrate.

24. The semiconductor device of claim 21, wherein the second conductivity type is an N-type conductivity type.