REFLECTIVE MASK BLANK, REFLECTIVE MASK AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
Patent Images
1. A reflective mask blank comprising:
- a substrate;
a multilayer reflective film on the substrate; and
a phase shift film that shifts the phase of EUV light on the multilayer reflective film;
wherein,root mean square roughness (Rms), obtained by measuring a 1 μ
m×
1 μ
m region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and an integrated value of power spectrum density at a spatial frequency of 10 to 100 μ
m is not more than 360 nm3.
1 Assignment
0 Petitions
Accused Products
Abstract
A reflective mask blank capable of obtaining high contrast at the edges of a phase shift film pattern. Provided is a reflective mask blank comprising a multilayer reflective film and a phase shift film that shifts the phase of EUV light formed in that order on a substrate, wherein root mean square roughness (Rms), obtained by measuring a 1 μm×1 μm region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and power spectrum density at a spatial frequency of 10 to 100 μm−1 is not more than 17 nm4.
0 Citations
20 Claims
-
1. A reflective mask blank comprising:
-
a substrate; a multilayer reflective film on the substrate; and a phase shift film that shifts the phase of EUV light on the multilayer reflective film;
wherein,root mean square roughness (Rms), obtained by measuring a 1 μ
m×
1 μ
m region on the surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and an integrated value of power spectrum density at a spatial frequency of 10 to 100 μ
m is not more than 360 nm3. - View Dependent Claims (2, 3, 4, 5, 19, 20)
-
-
6. A reflective mask comprising:
-
a substrate; a multilayer reflective film on the substrate; and a phase shift film pattern that shifts the phase of EUV light on the multilayer reflective film;
wherein,root mean square roughness (Rms), obtained by measuring a 1 μ
m×
1 μ
m region on the surface of the phase shift film pattern with an atomic force microscope, is not more than 0.50 nm, and an integrated value of power spectrum density at a spatial frequency of 10 to 100 μ
m is not more than 360 nm3. - View Dependent Claims (7, 8, 9, 10, 11)
-
-
12. A method of manufacturing a semiconductor device comprising:
-
carrying out a lithography process with an exposure device using a reflective mask to form a transfer pattern on a transferred substrate, the reflective mask comprising; a reflective mask substrate; a multilayer reflective film on the reflective mask substrate; and a phase shift film pattern that shifts the phase of EUV light formed on the multilayer reflective film;
wherein,root mean square roughness (Rms), obtained by measuring a 1 μ
m×
1 μ
m region on the surface of the phase shift film pattern with an atomic force microscope, is not more than 0.50 nm, and an integrated value of power spectrum density at a spatial frequency of 10 to 100 μ
m is not more than 360 nm3. - View Dependent Claims (13, 14, 15, 16, 17, 18)
-
Specification