SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
First Claim
1. A semiconductor device comprising:
- a stack including at least one conductive layer and at least one insulating layer which are alternately stacked;
contact plugs passing through the stack to different depths;
etch stop patterns enclosing respective sidewalls of the contact plugs; and
protective patterns enclosing the respective etch stop patterns,wherein the contact plugs pass through the etch stop patterns and the protective patterns, and are electrically coupled with the at least one conductive layer.
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Abstract
Provided herein is a method for manufacturing a semiconductor device. The method may include: forming a stack including at least one first material layer and at least one second material layer which are alternately stacked; forming first holes through which the at least one first material layer is exposed; forming etch stop patterns in the respective first holes; forming at least one slit passing through the stack; replacing the at least one first material layer with at least one third material layer through the at least one slit; and forming first contact plugs in the respective first holes, the first contact plugs passing through the etch stop patterns and coupled with the at least one third material layer.
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Citations
19 Claims
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1. A semiconductor device comprising:
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a stack including at least one conductive layer and at least one insulating layer which are alternately stacked; contact plugs passing through the stack to different depths; etch stop patterns enclosing respective sidewalls of the contact plugs; and protective patterns enclosing the respective etch stop patterns, wherein the contact plugs pass through the etch stop patterns and the protective patterns, and are electrically coupled with the at least one conductive layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A semiconductor device comprising:
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a stack including conductive layers and insulating layers which are alternately stacked; a first contact plug passing through the stack to a first depth; a first etch stop pattern enclosing a sidewall of the first contact plug; a first protective pattern enclosing the first etch stop pattern; a second contact plug passing through the stack to a second depth deeper than the first depth; a second etch stop pattern enclosing a sidewall of the second contact plug; and a second protective pattern enclosing the second etch stop pattern, wherein the first contact plug passes through the first etch stop pattern and the first protective pattern, and is electrically coupled with a first conductive layer among the conductive layers. - View Dependent Claims (10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification