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Semiconductor Device and Method for Atomic Layer Deposition of a Dielectric over a Substrate

  • US 20190341312A1
  • Filed: 07/15/2019
  • Published: 11/07/2019
  • Est. Priority Date: 05/31/2017
  • Status: Active Grant
First Claim
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1. A method comprising:

  • performing an atomic layer deposition (ALD) process to deposit a dielectric material over a substrate;

    curing the dielectric material using an ultra violet (UV) light; and

    annealing the dielectric material after the curing, wherein the annealing comprises a steam anneal process performed at a temperature below about 450°

    C. and for a time interval greater than about 30 minutes.

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