TECHNIQUES FOR CONTACT FORMATION IN SELF-ALIGNED REPLACMENT GATE DEVICE
First Claim
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1. A method, comprising:
- providing a device structure, the device structure comprising;
a semiconductor region, anda gate structure, disposed over the semiconductor region, the gate structure comprising a gate metal; and
oxidizing an upper portion of the gate metal, wherein the upper portion forms an oxide cap, and wherein a lower portion of the gate metal remains metallic.
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Abstract
A method may include providing a device structure, where the device structure includes a semiconductor region, and a gate structure, disposed over the semiconductor region. The gate structure may further include a gate metal. The method may further include oxidizing an upper portion of the gate metal, wherein the upper portion forms an oxide cap, and wherein a lower portion of the gate metal remains metallic.
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Citations
18 Claims
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1. A method, comprising:
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providing a device structure, the device structure comprising; a semiconductor region, and a gate structure, disposed over the semiconductor region, the gate structure comprising a gate metal; and oxidizing an upper portion of the gate metal, wherein the upper portion forms an oxide cap, and wherein a lower portion of the gate metal remains metallic. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method, comprising:
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forming a device structure, the device structure comprising; a semiconductor fin; a gate structure, disposed over a first portion of the semiconductor fin, the gate structure comprising a gate metal and a set of sidewall spacers; and a source/drain structure, disposed over a second portion of the semiconductor fin; oxidizing an upper portion of the gate metal, wherein the upper portion forms an oxide cap, and wherein a lower portion of the gate metal remains metallic; and selectively removing a top region of the oxide cap, wherein a bottom region of the oxide cap remains above the lower portion of the gate metal. - View Dependent Claims (10, 11, 12, 13, 14, 15)
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16. A method, comprising:
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providing a device structure, the device structure comprising; a semiconductor fin, and a gate structure, disposed over the semiconductor fin, the gate structure comprising a tungsten gate metal and a set of sidewall spacers; oxidizing an upper portion of the tungsten gate metal, wherein the upper portion forms a tungsten oxide, and wherein a lower portion of the tungsten gate metal remains metallic; and selectively removing a top region of the tungsten oxide, wherein a bottom region of the tungsten oxide remains above the lower portion of the tungsten gate metal. - View Dependent Claims (17, 18)
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Specification