SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
First Claim
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1. A method of manufacturing a semiconductor device, comprising:
- forming a stack group including a first source layer, a sacrificial source layer on the first source layer, a gate insulating layer on the sacrificial source layer, a first conductive layer on the gate insulating layer, and first material layers and second material layers alternately stacked on the first conductive layer;
forming a channel layer which is extended into the first source layer while passing through the first material layers and the second material layers and is surrounded by a multilayered memory layer;
forming a first through portion which passes the first material layers and the second material layers by selectively etching the first material layers and the second material layers with a first etching material before the first conductive layer is passed through;
forming a slit which is extended from the first through portion and passes through the first conductive layer and the gate insulating layer; and
replacing the sacrificial source layer with a contact source layer through the slit, the contact source layer being in direct contact with the first source layer and the channel layer and being insulated from the first conductive layer by the gate insulating layer.
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Abstract
A semiconductor device and a method of manufacturing a semiconductor device may be provided. The semiconductor device may include a source select line. The semiconductor device may include word lines. The semiconductor device may include a channel layer. The semiconductor device may include a source structure. The source structure may be disposed under the source select line. The source structure may be in contact with the channel layer.
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19 Claims
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1. A method of manufacturing a semiconductor device, comprising:
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forming a stack group including a first source layer, a sacrificial source layer on the first source layer, a gate insulating layer on the sacrificial source layer, a first conductive layer on the gate insulating layer, and first material layers and second material layers alternately stacked on the first conductive layer; forming a channel layer which is extended into the first source layer while passing through the first material layers and the second material layers and is surrounded by a multilayered memory layer; forming a first through portion which passes the first material layers and the second material layers by selectively etching the first material layers and the second material layers with a first etching material before the first conductive layer is passed through; forming a slit which is extended from the first through portion and passes through the first conductive layer and the gate insulating layer; and replacing the sacrificial source layer with a contact source layer through the slit, the contact source layer being in direct contact with the first source layer and the channel layer and being insulated from the first conductive layer by the gate insulating layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19)
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Specification