Contacting Embedded Electronic Component Via Wiring Structure in a Component Carrier's Surface Portion With Homogeneous Ablation Properties

• US 20190393155A1
• Filed: 09/04/2019
• Published: 12/26/2019
• Est. Priority Date: 12/16/2014
• Status: Active Grant

• Current Assignee: AT&S Austria Technologie & Systemtechnik AG
• Original Assignee: AT&S Austria Technologie & Systemtechnik AG
• Inventors: Stahr, Hannes
• Granted Patent: US 10,643,949 B2
• Time in Patent Office: Days
• CPC Class Codes: H01L 21/4803 Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks H01L21/4846 takes precedence; printed circuit boards H05K1/00
• CPC Class Codes: H01L 21/4846 Leads on or in insulating or insulated substrates, e.g. metallisation H01L21/4821 takes precedence; metallisation of ceramics in general C04B41/51; printed circuits H05K3/00
• CPC Class Codes: H01L 21/486 Via connections through the substrate with or without pins
• CPC Class Codes: H01L 2224/04105 Bonding areas formed on an encapsulation of the semiconductor or solid-state body, e.g. bonding areas on chip-scale packages
• CPC Class Codes: H01L 2224/08235 the bonding area connecting to a via metallisation of the item
• CPC Class Codes: H01L 2224/18 High density interconnect [HDI] connectors; Manufacturing methods related thereto
• CPC Class Codes: H01L 2224/214 Connecting portions
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/73267 Layer and HDI connectors
• CPC Class Codes: H01L 2224/92244 the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 2224/94 at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 23/13 characterised by the shape
• CPC Class Codes: H01L 23/145 Organic substrates, e.g. plastic
• CPC Class Codes: H01L 23/3107 the device being completely enclosed
• CPC Class Codes: H01L 23/3121 a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/49822 Multilayer substrates multilayer metallisation on monolayer substrate H01L23/498
• CPC Class Codes: H01L 23/49827 Via connections through the substrates, e.g. pins going through the substrate, coaxial cables H01L23/49822, H01L23/49833, H01L23/4985, H01L23/49861 take precedence
• CPC Class Codes: H01L 23/49838 Geometry or layout
• CPC Class Codes: H01L 23/5389 the chips being integrally enclosed by the interconnect and support structures
• CPC Class Codes: H01L 24/08 of an individual bonding area
• CPC Class Codes: H01L 24/19 : Manufacturing methods of high density interconnect preforms
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 2924/15153 : the die mounting substrate comprising a recess for hosting the device
• CPC Class Codes: H05K 1/0366 : reinforced, e.g. by fibres, fabrics H05K1/036 takes precedence
• CPC Class Codes: H05K 1/09 : Use of materials for the conductive, e.g. metallic pattern
• CPC Class Codes: H05K 1/115 : Via connections; Lands around holes or via connections H05K1/112 takes precedence
• CPC Class Codes: H05K 1/185 : Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit semiconductor chips encapsulated by interconnect and support structures H01L23/5389, H01L24/00
• CPC Class Codes: H05K 1/186 : manufactured by mounting on or connecting to patterned circuits before or during embedding
• CPC Class Codes: H05K 2201/0236 : Plating catalyst as filler in insulating material catalytic ink H05K2203/0709
• CPC Class Codes: H05K 2201/0376 : Flush conductors, i.e. flush with the surface of the printed circuit
• CPC Class Codes: H05K 2203/107 : Using laser light shaping a substrate by laser ablation H05K3/0026
• CPC Class Codes: H05K 2203/1469 : Circuit made after mounting or encapsulation of the components
• CPC Class Codes: H05K 3/0032 : of organic insulating material
• CPC Class Codes: H05K 3/0035 : of blind holes, i.e. having a metal layer at the bottom
• CPC Class Codes: H05K 3/027 : the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
• CPC Class Codes: H05K 3/045 : by making a conductive layer having a relief pattern, followed by abrading of the raised portions
• CPC Class Codes: H05K 3/107 : by filling grooves in the support with conductive material H05K3/045, H05K3/101, H05K3/1258 and H05K3/465 take precedence
• CPC Class Codes: H05K 3/181 : by electroless plating adhesives therefor H05K3/387
• CPC Class Codes: H05K 3/184 : using masks
• CPC Class Codes: H05K 3/188 : by direct electroplating
• CPC Class Codes: H05K 3/242 : characterised by using temporary conductors on the printed circuit for electrically connecting areas which are to be electroplated

Abstract

A component carrier for carrying electronic components includes an at least partially electrically insulating core, at least one electronic component embedded in the core, and a coupling structure with at least one electrically conductive through-connection extending at least partially therethrough and having a component contacting end and a wiring contacting end. The at least one electronic component is electrically contacted directly to the component contacting end. At least an exterior surface portion of the coupling structure has homogeneous ablation properties and is patterned so as to have surface recesses filled with an electrically conductive wiring structure, and the wiring contacting end is electrically contacted directly to the wiring structure.

Claims

1. A component carrier for carrying electronic components, wherein the component carrier comprises:

an at least partially electrically insulating core;

at least one electronic component embedded in the core;

a coupling structure with at least one electrically conductive through-connection extending at least partially therethrough and having a component contacting end and a wiring contacting end;

wherein the at least one electronic component is electrically contacted directly to the component contacting end;

wherein at least an exterior surface portion of the coupling structure has homogeneous ablation properties and is patterned so as to have surface recesses filled with an electrically conductive wiring structure;

wherein the wiring contacting end is electrically contacted directly to the wiring structure; and

wherein the at least one electrically conductive through-connection comprises at least one pillar.

2. The component carrier according to claim 1, embodied as one of the group consisting of a circuit board, in particular a printed circuit board, a substrate, and an interposer, wherein in particular the electronic component is selected from a group consisting of an active electronic component and a passive electronic component, in particular one of an electronic chip, a storage device, a filter, a sensor, an actuator, a microelectromechanical system, a microprocessor, a capacitor, a resistor, an inductance, a battery and a logic chip, wherein in particular electrically insulating material of the core comprises at least one of the group consisting of resin, in particular Bismaleimide-Triazine resin, glass fibers, prepreg material, polyimide, liquid crystal polymer, epoxy-based Build-Up Film, and FR4 material.

3. The component carrier according to claim 1, wherein at least the exterior surface portion of the coupling structure is made of a material free of glass fibres.

4. The component carrier according to claim 1, wherein at least the exterior surface portion of the coupling structure comprises at least one of the group consisting of a pure resin, a palladium doped resin, a copper oxide doped resin, and a photoresist, in particular a permanent resist.

5. The component carrier according to claim 1, wherein an exterior surface of the wiring structure is substantially flush with an exterior surface of the exterior surface portion of the coupling structure.

6. The component carrier according to claim 1, comprising at least one of the following features:

at least one further electrically conductive wiring structure on a main surface of the component carrier opposing another main surface thereof, at which other main surface the exterior surface portion of the coupling structure and the wiring structure are located;

an adhesive structure covering at least part of an interface between the coupling structure and the at least one electronic component embedded in the core;

at least one of the wiring structure and the at least one electrically conductive through-connection comprises or consists of at least one of the group consisting of copper, aluminum, and nickel;

dielectric material of the coupling structure comprises a matrix and filler particles embedded in the matrix, wherein the material of the matrix and of the filler particles together define the homogeneous ablation properties of the exterior surface portion of the coupling structure;

wherein the filler particles are selected in particular from a group consisting of beads, in particular glass spheres, and organic fibres;

the coupling structure comprises or consists of a, in particular prefabricated, separate coupling body;

the at least one electrically conductive through-connection has a cylindrical shape with an aspect ratio of larger than 1.

7. The component carrier according to claim 1, wherein a lateral extension, d, of traces of the wiring structure is narrower than a lateral extension, D, of the at least one electrically conductive through-connection.

8. The component carrier according to claim 1, wherein a lateral extension, d, of traces of the wiring structure is broader than a lateral extension, D, of the at least one electrically conductive through-connection.

9. The component carrier according to claim 1, wherein a lateral extension, D, of the at least one electrically conductive through-connection is essentially the same or broader than a lateral extension of the wiring structure, d.

10. The component carrier according to claim 1, wherein the component carrier comprises at least one of the group consisting of the following features:

wherein the coupling structure comprises or consists of a combination of a coupling body and a coupling layer being arranged at least partially on the coupling body;

wherein an electric interface between the at least one electronic component and the at least one electrically conductive through-connection is free of a redistribution layer;

wherein the at least one electronic component and at least part of the coupling structure are integrally formed, in particular are integrally formed in a semiconductor substrate.

11. The component carrier according to claim 1, wherein the at least one pillar is a circular cylindrical pillar.

12. The component carrier according to claim 1, wherein the at least one pillar comprises a polygonal, in particular rectangular, cross section.

13. The component carrier according to claim 1, wherein the electrically conductive through-connection comprises a plurality of pillars aligned in parallel to one another.

14. The component carrier according to claim 1, wherein the wiring structure is a laser-grooved copper-filled trace.

15. The component carrier according to claim 1, wherein a length of the at least one electrically conductive through-connection is larger than a length of the wiring structure.

16. The component carrier according to claim 1, wherein the electronic component comprises an electric contact, and wherein the component contacting end is directly connected to the electric contact.

17. The component carrier according to claim 16, wherein a lateral extension of the electric contact is essentially the same or broader than a lateral extension, D, of the at least one electrically conductive through-connection.

18. The component carrier according to claim 16, wherein a length of the at least one electrically conductive through-connection is larger than a length of the electric contact.

19. A method of manufacturing a component carrier for carrying electronic components, comprising:

embedding at least one electronic component in an at least partially electrically insulating core;

providing a coupling structure with at least one electrically conductive through-connection extending at least partially therethrough and being formed with a component contacting end and a wiring contacting end,

wherein the at least one electrically conductive through-connection comprises at least one pillar;

electrically contacting the at least one electronic component directly to the component contacting end;

providing at least an exterior surface portion of the coupling structure with homogeneous ablation properties;

patterning the exterior surface portion so as to form surface recesses; and

filling the surface recesses with an electrically conductive wiring structure so that the wiring contacting end is electrically contacted directly to the wiring structure.

20. The method according to claim 19, comprising at least one of the following features:

connecting the at least one electronic component to at least part of the coupling structure prior to embedding the at least one electronic component in the core;

providing a soft adhesive structure between the at least one electronic component and the at least one component contact end at an exposed surface of the coupling structure;

pressing the at least one electronic component and at least part of the coupling structure together to thereby squeeze the soft adhesive away from a contact area between the component contact end and an electric contact, in particular a protruding electric contact, of the at least one electronic component;

forming the surface recesses by at least one of laser drilling and etching, in particular by at least one of photolithographic etching and reactive ion etching;

forming at least one accommodation volume within the core;

accommodating the at least one electronic component in at least part of the at least one accommodation volume;

connecting the core with the at least one electronic component, in particular by pressing; and

fully embedding the wiring structure within the surface portion of the coupling structure without protruding beyond the surface portion;

wherein in particular the patterning and the filling are carried out so that the wiring structure is directly electrically connected to the at least one wiring contacting end of the at least one through-connection exposed by the patterning;

wherein in particular filling the surface recesses formed by the patterning is performed by an electroless deposition of electrically conductive material followed by a galvanic deposition of further electrically conductive material;

wherein the method in particular comprises polishing at least the exposed surface portion of the coupling structure together with the exposed wiring structure, in particular by chemical mechanical polishing;

attaching an electrically conductive mask layer and a photoresist layer on the exterior surface portion of the coupling structure;

patterning the photoresist layer and the electrically conductive mask layer to thereby expose part of the exterior surface portion of the coupling structure;

removing material of the exposed part of the exterior surface portion of the coupling structure to thereby expose at least part of the at least one wiring contacting end, in particular by a laser treatment; and

filling the so formed surface recesses with electrically conductive material to thereby form the wiring structure, in particular by an electroless deposition procedure followed by a galvanic deposition procedure;

wherein the method further comprises in particular removing the photoresist layer and the electrically conductive mask layer after the filling;

wherein the method does in particular not comprise polishing an exposed surface after the filling, in particular not by chemical mechanical polishing; and

wherein the method comprises in particular providing the at least one electronic component and at least part of the coupling structure as monolithically integrated structure within a common semiconductor substrate.