Method for Producing Polycrystalline Silicon Processed Article

• US 20200010327A1
• Filed: 03/07/2018
• Published: 01/09/2020
• Est. Priority Date: 03/08/2017
• Status: Active Grant

• Current Assignee: Tokuyama Corporation
• Original Assignee: Tokuyama Corporation
• Inventors: AKIYOSHI, Ayao
• Granted Patent: US 11,332,377 B2
• Time in Patent Office: Days
• CPC Class Codes: C01B 33/035 by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Abstract

A method for producing a polycrystalline silicon processed article includes removing a polycrystalline silicon rod, obtained by precipitating polycrystalline silicon on a silicon core wire held by a carbon member connected to an electrode in a reactor by the Siemens method, in a state in which the carbon member is included at the end portion thereof and processing the polycrystalline silicon rod. The polycrystalline silicon rod is detached from the electrode and the carbon member present on the end portion of the polycrystalline silicon rod is covered using a covering material until the processing, whereby the polycrystalline silicon rod and the carbon member are handled in a separated state.

Claims

1. A method for producing a polycrystalline silicon processed article comprising:

depositing a polycrystalline silicon by Siemens method to a silicon core wire held by a carbon member connected to an electrode in a reactor to obtain a polycrystalline silicon rod,

detaching the polycrystalline silicon rod from the electrode while having the carbon rod at an end of the polycrystalline silicon rod, and

processing the polycrystalline silicon rod,

wherein the carbon member at the end of the polycrystalline silicon rod is covered by a covering member after the polycrystalline silicon rod is detached from the electrode until being processed to handle the polysilicon rod and the carbon member in a separate condition.

2. The method for producing the polycrystalline silicon processed article according to claim 1, wherein a lower part of the polycrystalline silicon rod is covered by the covering member together with the carbon member.

3. The method for producing the polycrystalline silicon processed article according to claim 1, wherein an area 200 mm or less from the end of the polycrystalline silicon rod is covered when a lower part of the polycrystalline silicon rod is covered by the covering member together with the carbon member.

4. The method for producing the polycrystalline silicon processed article according to claim 1, wherein a lower part of the polycrystalline silicon rod is covered by the covering member together with the carbon member and also an upper part or entire polycrystalline silicon rod is covered by other covering member.

5. The method for producing the polycrystalline silicon processed article according to claim 1 further including removing the carbon member while the carbon member is covered by the covering member.

6. The method for producing the polycrystalline silicon processed article according to claim 1, wherein the covering member is a resin covering member.

7. The method for producing the polycrystalline silicon processed article according to claim 6, wherein the resin covering member is polyethylene film or bag.

8. A polycrystalline silicon processed article obtained by any the method according to claim 1.

9. The polycrystalline silicon processed article according to claim 8, wherein the polycrystalline silicon processed article is a polycrystalline silicon fragment.